Engineering topics

Blaes, Brent R.

Publications and source records attributed to Blaes, Brent R..

At least 19 records

NASA NTRS2012

Capacitance Probe Resonator for Multichannel Electrometer

A multichannel electrometer voltmeter has been developed that employs a mechanical resonator with voltage-sensing capacitance-probe electrodes that enable high-impedance, high-voltage, radiation-hardened measurement of an Internal Electrostatic Discharge Monitor (IESDM) sensor. The IESDM is new sensor technology targeted for integration into a Space Environmental Monitor (SEM) subsystem used for the characterization and monitoring of deep dielectric charging on spacecraft. The resonator solution relies on a non-contact, voltage-sensing, sinusoidal-varying capacitor to achieve input impedances as high as 10 petaohms as determined by the resonator materials, geometries, cleanliness, and construction. The resonator is designed with one dominant mechanical degree of freedom, so it resonates as a simple harmonic oscillator and because of the linearity of the variable sense capacitor to displacement, generates a pure sinusoidal current signal for a fixed input voltage under measurement. This enables the use of an idealized phase-lock sensing scheme for optimal signal detection in the presence of noise.

Blaes, Brent R.↗

NASA NTRS2012

Self-Nulling Lock-in Detection Electronics for Capacitance Probe Electrometer

A multi-channel electrometer voltmeter that employs self-nulling lock-in detection electronics in conjunction with a mechanical resonator with noncontact voltage sensing electrodes has been developed for space-based measurement of an Internal Electrostatic Discharge Monitor (IESDM). The IESDM is new sensor technology targeted for integration into a Space Environmental Monitor (SEM) subsystem used for the characterization and monitoring of deep dielectric charging on spacecraft. Use of an AC-coupled lock-in amplifier with closed-loop sense-signal nulling via generation of an active guard-driving feedback voltage provides the resolution, accuracy, linearity and stability needed for long-term space-based measurement of the IESDM. This implementation relies on adjusting the feedback voltage to drive the sense current received from the resonator s variable-capacitance-probe voltage transducer to approximately zero, as limited by the signal-to-noise performance of the loop electronics. The magnitude of the sense current is proportional to the difference between the input voltage being measured and the feedback voltage, which matches the input voltage when the sense current is zero. High signal-to-noise-ratio (SNR) is achieved by synchronous detection of the sense signal using the correlated reference signal derived from the oscillator circuit that drives the mechanical resonator. The magnitude of the feedback voltage, while the loop is in a settled state with essentially zero sense current, is an accurate estimate of the input voltage being measured. This technique has many beneficial attributes including immunity to drift, high linearity, high SNR from synchronous detection of a single-frequency carrier selected to avoid potentially noisy 1/f low-frequency spectrum of the signal-chain electronics, and high accuracy provided through the benefits of a driven shield encasing the capacitance- probe transducer and guarded input triaxial lead-in. Measurements obtained from a 2- channel prototype electrometer have demonstrated good accuracy (|error| < 0.2 V) and high stability. Twenty-four-hour tests have been performed with virtually no drift. Additionally, 5,500 repeated one-second measurements of 100 V input were shown to be approximately normally distributed with a standard deviation of 140 mV.

Blaes, Brent R.↗

NASA NTRS2012

Amplitude-Stabilized Oscillator for a Capacitance-Probe Electrometer

A multichannel electrometer voltmeter that employs a mechanical resonator maintained in sustained amplitude-stabilized oscillation has been developed for the space-based measurement of an Internal Electrostatic Discharge Monitor (IESDM) sensor. The IESDM is new sensor technology targeted for integration into a Space Environmental Monitor (SEM) subsystem used for the characterization and monitoring of deep dielectric charging on spacecraft. Creating a stable oscillator from the mechanical resonator was achieved by employing magnetic induction for sensing the resonator s velocity, and forcing a current through a coil embedded in the resonator to produce a Lorentz actuation force that overcomes the resonator s dissipative losses. Control electronics employing an AGC loop provide conditions for stabilized, constant amplitude harmonic oscillation. The prototype resonator was composed of insulating FR4 printed-wireboard (PWB) material containing a flat, embedded, rectangular coil connected through flexure springs to a base PWB, and immersed in a magnetic field having two regions of opposite field direction generated by four neodymium block magnets. In addition to maintaining the mechanical movement needed for the electrometer s capacitor-probe transducer, this oscillator provides a reference signal for synchronous detection of the capacitor probe s output signal current so drift of oscillation frequency due to environmental effects is inconsequential.

Blaes, Brent R.↗

NASA NTRS2011

Plug-and-Play Environmental Monitoring Spacecraft Subsystem

A Space Environment Monitor (SEM) subsystem architecture has been developed and demonstrated that can benefit future spacecraft by providing (1) real-time knowledge of the spacecraft state in terms of exposure to the environment; (2) critical, instantaneous information for anomaly resolution; and (3) invaluable environmental data for designing future missions. The SEM architecture consists of a network of plug-and- play (PnP) Sensor Interface Units (SIUs), each servicing one or more environmental sensors. The SEM architecture is influenced by the IEEE Smart Transducer Interface Bus standard (IEEE Std 1451) for its PnP functionality. A network of PnP Spacecraft SIUs is enabling technology for gathering continuous real-time information critical to validating spacecraft health in harsh space environments. The demonstrated system that provided a proof-of-concept of the SEM architecture consisted of three SIUs for measurement of total ionizing dose (TID) and single event upset (SEU) radiation effects, electromagnetic interference (EMI), and deep dielectric charging through use of a prototype Internal Electro-Static Discharge Monitor (IESDM). Each SIU consists of two stacked 2X2 in. (approximately 5X5 cm) circuit boards: a Bus Interface Unit (BIU) board that provides data conversion, processing and connection to the SEM power-and-data bus, and a Sensor Interface Electronics (SIE) board that provides sensor interface needs and data path connection to the BIU.

Patel, Jagdish↗

NASA NTRS2010

Electronic drive and acquisition system for mass spectrometry

The present invention discloses a mixed signal RF drive electronics board that offers small, low power, reliable, and customizable method for driving and generating mass spectra from a mass spectrometer, and for control of other functions such as electron ionizer, ion focusing, single-ion detection, multi-channel data accumulation and, if desired, front-end interfaces such as pumps, valves, heaters, and columns.

Schaefer, Rembrandt Thomas↗

NASA NTRS2001

Integrated semiconductor-magnetic random access memory system

The present disclosure describes a non-volatile magnetic random access memory (RAM) system having a semiconductor control circuit and a magnetic array element. The integrated magnetic RAM system uses CMOS control circuit to read and write data magnetoresistively. The system provides a fast access, non-volatile, radiation hard, high density RAM for high speed computing.

Katti, Romney R.↗

NASA NTRS1995

Person-Locator System Based On Wristband Radio Transponders

Computerized system based on wristband radio frequency (RF), passive transponders is being developed for use in real-time tracking of individuals in custodial institutions like prisons and mental hospitals. Includes monitoring system that contains central computer connected to low-power, high-frequency central transceiver. Transceiver connected to miniature transceiver nodes mounted unobtrusively at known locations throughout the institution. Wristband transponders embedded in common hospital wristbands. Wristbands tamperproof: each contains embedded wire loop which, when broken or torn off and discarded, causes wristband to disappear from system, thus causing alarm. Individuals could be located in a timely fashion at relatively low cost.

Mintz, Frederick W.↗

NASA NTRS1995

Gas-Sensing Flip-Flop Circuits

Gas-sensing integrated circuits consisting largely of modified static random-access memories (SRAMs) undergoing development, building on experience gained in use of modified SRAMs as radiation sensors. Each SRAM memory cell includes flip-flop circuit; sensors exploit metastable state that lies between two stable states (corresponding to binary logic states) of flip-flop circuit. Voltages of metastable states vary with exposures of gas-sensitive resistors.

Buehler, Martin G.↗

NASA NTRS1995

Method for characterizing the upset response of CMOS circuits using alpha-particle sensitive test circuits

A method for predicting the SEU susceptibility of a standard-cell D-latch using an alpha-particle sensitive SRAM, SPICE critical charge simulation results, and alpha-particle interaction physics. A technique utilizing test structures to quickly and inexpensively characterize the SEU sensitivity of standard cell latches intended for use in a space environment. This bench-level approach utilizes alpha particles to induce upsets in a low LET sensitive 4-k bit test SRAM. This SRAM consists of cells that employ an offset voltage to adjust their upset sensitivity and an enlarged sensitive drain junction to enhance the cell's upset rate.

Buehler, Martin G.↗

NASA NTRS1994

p-MOSFET total dose dosimeter

A p-MOSFET total dose dosimeter where the gate voltage is proportional to the incident radiation dose. It is configured in an n-WELL of a p-BODY substrate. It is operated in the saturation region which is ensured by connecting the gate to the drain. The n-well is connected to zero bias. Current flow from source to drain, rather than from peripheral leakage, is ensured by configuring the device as an edgeless MOSFET where the source completely surrounds the drain. The drain junction is the only junction not connected to zero bias. The MOSFET is connected as part of the feedback loop of an operational amplifier. The operational amplifier holds the drain current fixed at a level which minimizes temperature dependence and also fixes the drain voltage. The sensitivity to radiation is made maximum by operating the MOSFET in the OFF state during radiation soak.

Buehler, Martin G.↗

NASA NTRS1994

Particle sensor array

A particle sensor array which in a preferred embodiment comprises a static random access memory having a plurality of ion-sensitive memory cells, each such cell comprising at least one pull-down field effect transistor having a sensitive drain surface area (such as by bloating) and at least one pull-up field effect transistor having a source connected to an offset voltage. The sensitive drain surface area and the offset voltage are selected for memory cell upset by incident ions such as alpha-particles. The static random access memory of the present invention provides a means for selectively biasing the memory cells into the same state in which each of the sensitive drain surface areas is reverse biased and then selectively reducing the reversed bias on these sensitive drain surface areas for increasing the upset sensitivity of the cells to ions. The resulting selectively sensitive memory cells can be used in a number of applications. By way of example, the present invention can be used for measuring the linear energy transfer of ion particles, as well as a device for assessing the resistance of CMOS latches to Cosmic Ray induced single event upsets. The sensor of the present invention can also be used to determine the uniformity of an ion beam.

Buehler, Martin G.↗

NASA NTRS1994

Making A D-Latch Sensitive To Alpha Particles

Standard complementary metal oxide/semiconductor (CMOS) D-latch integrated circuit modified to increase susceptibility to single-event upsets (SEU's) (changes in logic state) caused by impacts of energetic alpha particles. Suitable for use in relatively inexpensive bench-scale SEU tests of itself and of related integrated circuits like static random-access memories.

Buehler, Martin G.↗

NASA NTRS1994

Advanced p-MOSFET Ionizing-Radiation Dosimeter

Circuit measures total dose of ionizing radiation in terms of shift in threshold gate voltage of doped-channel metal oxide/semiconductor field-effect transistor (p-MOSFET). Drain current set at temperature-independent point to increase accuracy in determination of radiation dose.

Buehler, Martin G.↗

NASA NTRS1993

SRAM As An Array Of Energetic-Ion Detectors

Static random-access memory (SRAM) designed for use as array of energetic-ion detectors. Exploits well-known tendency of incident energetic ions to cause bit flips in cells of electronic memories. Design of ion-detector SRAM involves modifications of standard SRAM design to increase sensitivity to ions. Device fabricated by use of conventional complementary metal oxide/semiconductor (CMOS) processes. Potential uses include gas densimetry, position sensing, and measurement of cosmic-ray spectrum.

Buehler, Martin G.↗

NASA NTRS1992

Design and qualification of the SEU/TD Radiation Monitor chip

This report describes the design, fabrication, and testing of the Single-Event Upset/Total Dose (SEU/TD) Radiation Monitor chip. The Radiation Monitor is scheduled to fly on the Mid-Course Space Experiment Satellite (MSX). The Radiation Monitor chip consists of a custom-designed 4-bit SRAM for heavy ion detection and three MOSFET's for monitoring total dose. In addition the Radiation Monitor chip was tested along with three diagnostic chips: the processor monitor and the reliability and fault chips. These chips revealed the quality of the CMOS fabrication process. The SEU/TD Radiation Monitor chip had an initial functional yield of 94.6 percent. Forty-three (43) SEU SRAM's and 14 Total Dose MOSFET's passed the hermeticity and final electrical tests and were delivered to LL.

Buehler, Martin G.↗

NASA NTRS1989

Timing Sampler For Delay Measurements

Integrated circuit called timing sampler used to measure delays in complementary metal oxide/silicon logic gates. Circuit chip contains chains of inverters and metal traces having minimum parasitic delays (delay chains), circuits to compare pulse timings, and output multiplexer. Timing sampler enables delay measurements for both positive and negative logic-level transitions by use of variety of circuit geometries representing tentative practical designs.

Blaes, Brent R.↗

NASA NTRS1988

Measuring Critical Charges For Single-Event Upsets

Concept for determining susceptibility of integrated circuits to single-event upsets (SEU's) based on direct measurement of critical charge causing upset. Test circuit is modified version of standard complementary metal-oxide/semiconductor static cell. Contains six transistors, connected to form latch that retains state of cell set by input pulses. Makes possible to evaluate vulnerability to SEU during design and development of digital equipment.

Buehler, Martin G.↗

NASA NTRS1988

System Measures Logic-Gate Delays

Many gates on chip tested automatically. Automatic testing system measures signal-propagation delays of experimental integrated-circuit array of logic gates. Includes controlling computer, counter/time, and feedback-controlled timing-waveform generator. Multiplexer included on integrated-circuit chip with logic-gate array to be tested. Delays measured by system serve as valuable data for design of fast logic and memory chips.

Blaes, Brent R.↗