NASA NTRS · 19940000251
Advanced p-MOSFET Ionizing-Radiation Dosimeter
Abstract
Circuit measures total dose of ionizing radiation in terms of shift in threshold gate voltage of doped-channel metal oxide/semiconductor field-effect transistor (p-MOSFET). Drain current set at temperature-independent point to increase accuracy in determination of radiation dose.
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Buehler, Martin G., Blaes, Brent R.. 1994-05-01. Advanced p-MOSFET Ionizing-Radiation Dosimeter. https://ntrs.nasa.gov/citations/19940000251
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