Quantum dot modeling using NEMO 3-D
MS PowerPoint Presentation.
Engineering topics
Publications and source records attributed to Bowen, R..
MS PowerPoint Presentation.
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Unintuitive hole transport phenomena through heterostructures are presented.
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A genetic algorithm approach is used to fit orbital interaction energies of sp3s* tight-binding models for the nine binary compound semiconductors consistent of Ga, Al, In and As, P, Sb at room temperature.
Quantum mechanical simulations of carrier transport in Si require an accurate model of the complicated Si bandstructure. Tight-binding models are an attractive method of choice since they bear the full electronic structure symmetry in them and they can discretize a realistic device on an atomic scale.
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