NASA NTRS · 20060034413
Si Tight-Binding Parameters from Genetic Algorithm Fitting
Abstract
Quantum mechanical simulations of carrier transport in Si require an accurate model of the complicated Si bandstructure. Tight-binding models are an attractive method of choice since they bear the full electronic structure symmetry in them and they can discretize a realistic device on an atomic scale.
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Klimeck, G., Bowen, R., Boykin, T., Salazar-Lazaro, C., Cwik, T., Stoica, A.. 1999-10-01. Si Tight-Binding Parameters from Genetic Algorithm Fitting. https://ntrs.nasa.gov/citations/20060034413
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