Toward silicon quantum dot quantum computing: valley splitting and quantum dots in Si/SiGe quantum wells
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Engineering topics
Publications and source records attributed to Boykin, T..
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MS PowerPoint Presentation.
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Unintuitive hole transport phenomena through heterostructures are presented.
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A genetic algorithm approach is used to fit orbital interaction energies of sp3s* tight-binding models for the nine binary compound semiconductors consistent of Ga, Al, In and As, P, Sb at room temperature.
Quantum mechanical simulations of carrier transport in Si require an accurate model of the complicated Si bandstructure. Tight-binding models are an attractive method of choice since they bear the full electronic structure symmetry in them and they can discretize a realistic device on an atomic scale.
The NASA/JPL goal to reduce payload in future space missions while increasing mission capability demands miniaturization of measurement, analytical and communication systems.
The development of NEMO has benefited from the vast research on resonant tunneling diodes that had been done before the project.
Material variations on an atomic scale enable the quantum mechanical functionality of devices such as resonant tunneling diodes (RTDs), quantum well infrared photodetectors (QWIPs), quantum well lasers, and heterostructure field effect transistors (HFETs).