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Butler, J. F.

Publications and source records attributed to Butler, J. F..

8 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1996

Radiation Effects in CdZnTe Gamma-Ray Detectors Produced by 199 MeV Protons

Many future space missions will use Cadmium Sinc Telluride (CdZnTe) gamma-ray detectors because their operation at room temperature makes compact, lightweight detector systems possible. Even though instruments for space using CdZnTe detectors have already been built, the effect of the high-energy particle space environment on these detectors has not been measured. To determine the effect of energetic charged particles on these detectors, we have bombarded seveal CdZnTe detectors with 199 MeV protons at the Indiana University Cyclotron Facility.

radiation↗
NASA NTRS1993

Charge-carrier mobilities in Cd(0.8)Zn(0.2)Te single crystals used as nuclear radiation detectors

Charge-carrier mobilities were measured for the first time in Cd(0.8)Zn(0.2)Te single crystals using time-of-flight measurements of charge carriers produced by short (10 ns) light pulses from a frequency-doubled Nd:YAG laser (532 nm). The electron mobility displayed a T exp -1.1 dependence on the absolute temperature T in the range 200-320 K, with a room-temperature mobility of 1350 sq cm/V s. The hole mobility displayed a T exp -2.0 dependence in the same temperature range, with a room-temperature mobility of 120 sq cm/V s. Cd(0.8)Zn(0.2)Te appears to be a very favorable material for a room-temperature electronic nuclear radiation detector.

Burshtein, Z.↗
NASA NTRS1981

Development of lead salt semiconductor lasers for the 9-17 micron spectral region

Improved diode lasers of Pb sub 1-x Sn sub x Se operating in the 9-17 micrometers spectral region were developed. The performance characteristics of the best lasers exceeded the contract goals of 500 microW/mode at T 30K in the 9-12 micrometers region and 200 microW/mode at T 18K in the 16-17 micrometers region. Increased reliability and device yields resulted from processing improvements which evolved from a series of diagnostic studies. By means of Auger electron spectroscopy, laser shelf storage degradation was shown to be characterized by the presence of In metal on the semiconductor crystal surfaces. Studies of various metal barrier layers between the crystals and the In metal led to the development of an improved metallurgical contacting technology which has resulted in devices with performance stability values exceeding the contract goal of a one year shelf life. Lasers cycled over 500 times between 300K and 77K were also shown to be stable. Studies on improved methods of fabricating striped geometry lasers indicated that good spectral mode characteristics resulted from lasers which stripe widths of 12 and 25 micrometers.

Linden, K. J.↗
NASA NTRS1980

Reliability improvements in tunable Pb1-xSnxSe diode lasers

Recent developments in the technology of Pb-salt diode lasers which have led to significant improvements in reliability and lifetime, and to improved operation at very long wavelengths are described. A combination of packaging and contacting-metallurgy improvements has led to diode lasers that are stable both in terms of temperature cycling and shelf-storage time. Lasers cycled over 500 times between 77 K and 300 K have exhibited no measurable changes in either electrical contact resistance or threshold current. Utilizing metallurgical contacting process, both lasers and experimental n-type and p-type bulk materials are shown to have electrical contact resistance values that are stable for shelf storage periods well in excess of one year. Problems and experiments which have led to devices with improved performance stability are discussed. Stable device configurations achieved for material compositions yielding lasers which operate continuously at wavelengths as long as 30.3 micrometers are described.

Linden, K. J.↗
NASA NTRS1977

Advanced development of Pb-salt semiconductor lasers for the 8.0 to 15.0 micrometer spectral region

The technology was studied for producing Pb-salt diode lasers for the 8-51 micron spectral region suitable for use as local oscillators in a passive Laser Heterodyne Spectrometer (LHS). Consideration was given to long range NASA plans for the utilization of the passive LHS in a space shuttle environment. The general approach was to further develop the method of compositional interdiffusion (CID) recently reported, and used successfully at shorter wavelength. This technology was shown to provide an effective and reproducible method of producing a single-heterostructure (SH) diode of either the heterojunction or single-sided configuration. Performance specifications were exceeded in several devices, with single-ended CW power outputs as high as 0.88 milliwatts in a mode being achieved. The majority of the CID lasers fabricated had CW operating temperatures of over 60K; 30% of them operated CW above the boiling temperature of liquid nitrogen. CW operation above liquid nitrogen temperature was possible for wavelengths as long as 10.3 microns. Operation at 77K is significant with respect to space shuttle operations since its allows considerable simplification of cooling method.

Linden, K. J.↗
NASA NTRS1977

Single heterostructure lasers of PbS/1-x/Se/x/ and Pb/1-x/Sn/x/Se with wide tunability

Single-heterostructure diode lasers formed by compositional interdiffusion (CID) and liquid-phase epitaxy (LPE) of lead salts are discussed. The CID technique, which involves creation of a single heterostructure in a pseudobinary compound having binary constituents with different vapor pressures, is reviewed; growth of lead-salt crystals of various compositions is described. Some electrical and optical characteristics, including properties indicative of high internal quantum efficiencies, are given for lasers which employ the CID and LPE diodes. High operating temperatures (i.e., liquid nitrogen levels and above), together with wide tuning ranges (a diode wavelength of 12.7 microns is reported), make the lasers useful in high-resolution spectrometry and advanced trace-gas monitoring systems.

Linden, K. J.↗
NASA NTRS1976

Research and development for improved lead-salt diode lasers

A substantial increase in output power levels for lead-salt diode lasers, through the development of improved fabrication methods, as demonstrated. The goal of 1 mW of CW, single-mode, single-ended power output, was achieved, with exceptional devices exhibiting values greater than 8 mW. It was found that the current tuning rate could be controlled by adjusting the p-n junction depth, allowing the tuning rate to be optimized for particular applications. An unexpected phenomenon was encountered when crystal composition was observed to be significantly altered by annealing at temperatures as low as 600 C; the composition was changed by transport of material through the vapor phase. This effect caused problems in obtaining diode lasers with the desired operating characteristics. It was discovered that the present packaging method introduces gross damaging effects in the laser crystal through pressure applied by the C-bend.

Butler, J. F.↗