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NASA NTRS ยท 19760025449

Research and development for improved lead-salt diode lasers

Abstract

A substantial increase in output power levels for lead-salt diode lasers, through the development of improved fabrication methods, as demonstrated. The goal of 1 mW of CW, single-mode, single-ended power output, was achieved, with exceptional devices exhibiting values greater than 8 mW. It was found that the current tuning rate could be controlled by adjusting the p-n junction depth, allowing the tuning rate to be optimized for particular applications. An unexpected phenomenon was encountered when crystal composition was observed to be significantly altered by annealing at temperatures as low as 600 C; the composition was changed by transport of material through the vapor phase. This effect caused problems in obtaining diode lasers with the desired operating characteristics. It was discovered that the present packaging method introduces gross damaging effects in the laser crystal through pressure applied by the C-bend.

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BibTeXRIS

Butler, J. F.. 1976-01-01. Research and development for improved lead-salt diode lasers. https://ntrs.nasa.gov/citations/19760025449

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