Engineering topics
Publications and source records attributed to Campola, M..
Semicoa's silicon switching transistors, JANTXV2N2222AUB was tested for total ionizing dose (TID) response beginning on November 4, 2019. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.
This presentation gives an overview pulsed laser testing methods and practical examples for radiation hardness assurance in space system electronics.
Microsemi's silicon switching transistors, JANTXV2N2222AUB and 2N2907AUB, were tested for total ionizing dose (TID) response beginning on July 11, 2016. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.
Space applications are complex systems that require intricate trade analyses for optimum implementations. We focus on a subset of the trade process, using classical reliability theory and SEU data, to illustrate appropriate TMR scheme selection.
The Texas Instruments'™ (TI) MAX4595 was tested for single event latch-up (SEL) response at the Texas A&M University Cyclotron Facility (TAMU) on 26 October 2014. The device was exercised in varied load conditions to replicate its intended application with concerns about destructive effects on the commercial device.
Single event latchup (SEL) in a 65 nm CMOS SRAM technology is observed and sensitivity is shown to be a strong function of lateral beam orientation, angle of incidence, and temperature. The significance of these results are discussed and the foundation for a predictive model of SEL is laid out for use with the MRED tool.