Single donor devices for 1 and 2 electron spin qubits in silicon.
Abstract Not Provided
Carroll, Malcolm S↗
Engineering topics
Carroll, Malcolm S
Publications and source records attributed to Carroll, Malcolm S.
Distinguishing adiabaticity from relaxation in a Si double quantum dot charge qubit.
Abstract Not Provided
Jacobson, Noah Tobias↗
Single Ion Implant of Self-Aligned Poly-Silicon Nanostructures .
Abstract Not Provided
Bielejec, Edward S↗
Controlled deterministic Implantation at the limit of ion straggle by nanostencil lithography.
Abstract Not Provided
Bielejec, Edward S↗
Silicon-Based Low-Dimensional Electronic Devices: Fabrication Characterization and their Physical Behavior in the Quantum Regime.
Abstract Not Provided
Lu, Tzu-Ming↗
Silicon-Based Low-Dimensional Electronic Devices: Fabrication Characterization and their Physical Behavior in the Quantum Regime.
Abstract Not Provided
Lu, Tzu-Ming↗
Measurements of Spin Life Time of an Antimony-Bound Electron in Silicon.
Abstract Not Provided
Lu, Tzu-Ming↗
Strained layer superlattice focal plane array having a planar structure
An infrared focal plane array (FPA) is disclosed which utilizes a strained-layer superlattice (SLS) formed of alternating layers of InAs and In.sub.xGa.sub.1-xSb with 0.ltoreq.x.ltoreq.0.5 epitaxially grown on a GaSb substrate. The FPA avoids the use of a mesa structure to isolate each photodetector element and instead uses impurity-doped regions formed in or about each photodetector for electrical isolation. This results in a substantially-planar structure in which the SLS is unbroken across the entire width of a 2-D array of the photodetector elements which are capped with an epitaxially-grown passivation layer to reduce or eliminate surface recombination. The FPA has applications for use in the wavelength range of 3-25 .mu.m.
47 OTHER INSTRUMENTATION↗