DOE OSTI · 1079246
Strained layer superlattice focal plane array having a planar structure
Abstract
An infrared focal plane array (FPA) is disclosed which utilizes a strained-layer superlattice (SLS) formed of alternating layers of InAs and In.sub.xGa.sub.1-xSb with 0.ltoreq.x.ltoreq.0.5 epitaxially grown on a GaSb substrate. The FPA avoids the use of a mesa structure to isolate each photodetector element and instead uses impurity-doped regions formed in or about each photodetector for electrical isolation. This results in a substantially-planar structure in which the SLS is unbroken across the entire width of a 2-D array of the photodetector elements which are capped with an epitaxially-grown passivation layer to reduce or eliminate surface recombination. The FPA has applications for use in the wavelength range of 3-25 .mu.m.
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Kim, Jin K, Carroll, Malcolm S, Gin, Aaron, Marsh, Phillip F, Young, Erik W, Cich, Michael J. 2012-10-23. Strained layer superlattice focal plane array having a planar structure. https://www.osti.gov/biblio/1079246
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