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Chan, W. W.

Publications and source records attributed to Chan, W. W..

A backside illuminated 400 x 400 charge-coupled device imager

Large-area backside illuminated charge-coupled device imagers have been fabricated using double level aluminum transfer electrode technology. Devices with 100 x 160 and 400 x 400 resolution elements have been fabricated using buried channel technology for high charge transfer efficiency. Detailed optical characterization has been performed on these imagers over the temperature range -40 to +24 C and at several operating frequencies between 10 kHz and 1 MHz.

Antcliffe, G. A.↗

Development of a CCD for ultraviolet imaging using a CCD photocathode combination

CCD in the electron-in mode, coupled with a bi-alkali photocathode to produce UV photon conversion, provides the following desirable features: (1) high UV response of the bi-alkali photocathode; (2) excellent imaging quality of a CCD area array; and (3) high signal-to-noise ratio due to the EBS (electron bombarded silicon) gain of the CCD operating in a tube configuration. This paper describes the rationale and progress made in developing a CCD for use as an UV imager.

Collins, D. R.↗