NASA NTRS · 19770030086
A backside illuminated 400 x 400 charge-coupled device imager
Abstract
Large-area backside illuminated charge-coupled device imagers have been fabricated using double level aluminum transfer electrode technology. Devices with 100 x 160 and 400 x 400 resolution elements have been fabricated using buried channel technology for high charge transfer efficiency. Detailed optical characterization has been performed on these imagers over the temperature range -40 to +24 C and at several operating frequencies between 10 kHz and 1 MHz.
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Antcliffe, G. A., Hornbeck, L. J., Chan, W. W., Walker, J. W., Rhines, W. C., Collins, D. R.. 1976-11-01. A backside illuminated 400 x 400 charge-coupled device imager. https://ntrs.nasa.gov/citations/19770030086
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