Engineering topics

Hornbeck, L. J.

Publications and source records attributed to Hornbeck, L. J..

5 records

NASA NTRS1989

Finite element analysis of a micromechanical deformable mirror device

A monolithic spatial light modulator chip was developed consisting of a large number of micrometer-scale mirror cells which can be rotated through an angle by application of an electrostatic field. The field is generated by electronics integral to the chip. The chip has application in photoreceptor based non-impact printing technologies. Chips containing over 16000 cells were fabricated, and were tested to several billions of cycles. Finite Element Analysis (FEA) of the device was used to model both the electrical and mechanical characteristics.

Sheerer, T. J.↗

NASA NTRS1984

A hybrid silicon membrane spatial light modulator for optical information processing

A new two dimensional, fast, analog, electrically addressable, silicon based membrane spatial light modulator (SLM) was developed for optical information processing applications. Coherent light reflected from the mirror elements is phase modulated producing an optical Fourier transform of an analog signal input to the device. The DMD architecture and operating parameters related to this application are presented. A model is developed that describes the optical Fourier transform properties of the DMD.

Pape, D. R.↗

NASA NTRS1977

Charge coupled devices

The results are presented of a program to design, fabricate, and test CCD arrays suitable for operation in an electron-bombarded mode. These intensified charge coupled devices have potential application to astronomy as photon-counting arrays. The objectives of this program were to deliver arrays of 250 lines of 400 pixels each and some associated electronics. Some arrays were delivered on tube-compatible headers and some were delivered after incorporation in vacuum tubes. Delivery of these devices required considerable improvements to be made in the processing associated with intensified operation. These improvements resulted in a high yield in the thinning process, reproducible results in the accumulation process, elimination of a dark current source in the accumulation process, solution of a number of header related problems, and the identification of a remaining major source of dark current. Two systematic failure modes were identified and protective measures established. The effects of tube processing on the arrays in the delivered ICCDs were determined and are reported along with the characterization data on the arrays.

Walker, J. W.↗

NASA NTRS1976

A backside illuminated 400 x 400 charge-coupled device imager

Large-area backside illuminated charge-coupled device imagers have been fabricated using double level aluminum transfer electrode technology. Devices with 100 x 160 and 400 x 400 resolution elements have been fabricated using buried channel technology for high charge transfer efficiency. Detailed optical characterization has been performed on these imagers over the temperature range -40 to +24 C and at several operating frequencies between 10 kHz and 1 MHz.

Antcliffe, G. A.↗

NASA NTRS1975

Large-area CCD imagers for spacecraft applications

Backside illuminated CCD imagers with 100 x 160 resolution elements have been fabricated using double level metal technology. Detailed study of the optical performance of such arrays has been performed between 24 C and -40 C using data rates from 10 kHz to 1 MHz. A 400 x 400 array is presently being fabricated.

Antcliffe, G. A.↗