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Chen, Cheng

Publications and source records attributed to Chen, Cheng.

64 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi 2 O 2 Se

Semiconductors are essential materials that affect our everyday life in the modern world. Two-dimensional semiconductors with high mobility and moderate bandgap are particularly attractive today because of their potential application in fast, low-power, and ultrasmall/thin electronic devices. We investigate the electronic structures of a new layered air-stable oxide semiconductor, Bi 2 O 2 Se, with ultrahigh mobility (~2.8 × 10 5 cm 2 /V∙s at 2.0 K) and moderate bandgap (~0.8 eV). Combining angle-resolved photoemission spectroscopy and scanning tunneling microscopy, we mapped out the complete band structures of Bi 2 O 2 Se with key parameters (for example, effective mass, Fermi velocity, and bandgap). The unusual spatial uniformity of the bandgap without undesired in-gap states on the sample surface with up to ~50% defects makes Bi 2 O 2 Se an ideal semiconductor for future electronic applications. In addition, the structural compatibility between Bi 2 O 2 Se and interesting perovskite oxides (for example, cuprate high–transition temperature superconductors and commonly used substrate material SrTiO 3 ) further makes heterostructures between Bi 2 O 2 Se and these oxides possible platforms for realizing novel physical phenomena, such as topological superconductivity, Josephson junction field-effect transistor, new superconducting optoelectronics, and novel lasers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2018

Collaborative Autonomous Logistics

This video shows a demonstration of collaborative autonomous logistics. Turtlebot, a 1-g stand-in for Astrobee, carried REALM sensors around a mockup of ISS in ARGOS to autonomously survey for a cargo bag stowed in a drawer. It provided the location of the bag to Robonaut, which then autonomously climbed across the mockup to the drawer. Robonaut then used the Affordance Template manipulation framework to localize and open the drawer and then again localize and retrieve the cargo bag.

Badger, Julia M.↗
DOE OSTI2018

Graphene Oxide‐Template Controlled Cuboid‐Shaped High‐Capacity VS 4 Nanoparticles as Anode for Sodium‐Ion Batteries

Abstract Room‐temperature sodium‐ion batteries have attracted great attentions for large‐scale energy storage applications in renewable energy. However, exploring suitable anode materials with high reversible capacity and cyclic stability is still a challenge. The VS 4 , with parallel quasi‐1D chains structure of V 4+ (S 2 2− ) 2 , which provides large interchain distance of 5.83 Å and high capacity, has showed great potential for sodium storage. Here, the uniform cuboid‐shaped VS 4 nanoparticles are prepared as anode for sodium‐ion batteries by the controllable of graphene oxide (GO)‐template contents. It exhibits superb electrochemical performances of high‐specific charge capacity (≈580 mAh·g −1 at 0.1 A·g −1 ), long‐cycle‐life (≈98% retain at 0.5 A·g− 1 after 300 cycles), and high rates (up to 20 A·g −1 ). In addition, electrolytes are optimized to understand the sodium storage mechanism. It is thus demonstrated that the findings have great potentials for the applications in high‐performance sodium‐ion batteries.

Wang, Sizhe↗
DOE OSTI2018

Interaction Between Proppant Compaction and Single-/Multiphase Flows in a Hydraulic Fracture

Understanding proppant-transport and -deposition patterns in a hydraulic fracture is vital for effective and economical production of petroleum hydrocarbons. In this research, a numerical-modeling approach, combining the discrete-element method (DEM) with single-/multiphase lattice Boltzmann (LB) simulation, was adopted to advance understanding of the interaction between reservoir depletion, proppant-particle compaction, and single-/multiphase flows in a hydraulic fracture. DEM was used to simulate effective-stress increase and the resultant proppant-particle movement and rearrangement during the process of reservoir depletion caused by hydrocarbon production. Simulated pore structure of the proppant pack was extracted and used as boundary conditions in the LB simulation to calculate the time-dependent permeability of the proppant pack. We first validated the DEM-LB numerical work flow, and the simulated proppant-pack permeabilities as functions of effective stress were in good agreement with laboratory measurements. Furthermore, three proppant packs with the same average particle diameter but different diameter distributions were generated to study the role of proppant-size heterogeneity (variation in particle diameter). Specifically, we used the coefficient of variation (COV) of diameter, defined as the ratio of standard deviation of diameter to mean diameter, to characterize the heterogeneity of particle size. We obtained proppant-pack porosity, permeability, and fracture-width reduction (closure distance) as functions of effective stress. Under the same effective stress, a proppant pack with a higher diameter COV had lower porosity and permeability and larger fracture-width reduction. This was because the high diameter COV gave rise to a wider diameter distribution of proppant particles; smaller particles were compressed into the pore space between larger particles with increasing stress, leading to larger closure distance and lower porosity and permeability. With multiphase LB simulation, relative permeability curves were obtained, which are critical for larger-scale reservoir simulations under various effective stresses. The relative permeability of the oil phase was more sensitive to changes in geometry and stress, compared with the wetting phase. This was because the oil phase occupied larger pores; compaction of the proppant pack affected the structure of the pores, because the pores were farther from the grain contacts and thus more susceptible to collapse. It is also interesting to note that when effective stress increased continuously, oil relative permeability increased first and then decreased. This nonmonotonic behavior was the result of the nonmonotonic development of pore structure and oil connectivity under increasing stress.

Fan, Ming↗
DOE OSTI2017

High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi 2 O 2 Se

Identifying new two-dimensional (2D) materials with both high carrier mobility and a large electronic band gap is critical for novel electronics and optoelectronics applications. Here, we demonstrated a new air-stable ultrahigh-mobility layered Bi 2 O 2 Se semiconductor with a large band gap of ~ 0.8 eV and a low effective mass of ~ 0.14 m 0 . High-quality 2D Bi2O2Se crystals with a thickness down to a monolayer and a domain size greater than 200 μm were readily grown by chemical vapor deposition (CVD). Size-tunable band gap of Bi 2 O 2 Se was found to increase as thinning down to the monolayer due to the quantum confinement effect. An ultrahigh Hall mobility of > 20,000 cm 2 V -1 s -1 was achieved in as-grown Bi 2 O 2 Se flakes at 1.9 K, which allows for the observation of Shubnikov–de Haas quantum oscillations. Top-gated field-effect transistors based on CVD-grown 2D Bi 2 O 2 Se crystals (down to bilayer) exhibited high Hall mobility (up to 450 cm 2 V -1 s -1 ), large current on/off ratios (>106) and near-ideal subthreshold swings (~65 mV/dec) at room temperature. Our results make the high-mobility 2D Bi 2 O 2 Se semiconductor a promising candidate for future high-speed and low-power electronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Low energy electron irradiation induced carbon etching: Triggering carbon film reacting with oxygen from SiO{sub 2} substrate

We report low-energy (50–200 eV) electron irradiation induced etching of thin carbon films on a SiO{sub 2} substrate. The etching mechanism was interpreted that electron irradiation stimulated the dissociation of the carbon film and SiO{sub 2}, and then triggered the carbon film reacting with oxygen from the SiO{sub 2} substrate. A requirement for triggering the etching of the carbon film is that the incident electron penetrates through the whole carbon film, which is related to both irradiation energy and film thickness. This study provides a convenient electron-assisted etching with the precursor substrate, which sheds light on an efficient pathway to the fabrication of nanodevices and nanosurfaces.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗