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Chen, Gong

Publications and source records attributed to Chen, Gong.

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Reducing crystal symmetry to generate out-of-plane Dzyaloshinskii–Moriya interaction

The Dzyaloshinskii-Moriya antisymmetric exchange interaction (DMI) stabilises topological spin textures with promising future spintronics applications. According to crystal symmetry, the DMI can be categorized as four different types that favour different chiral textures. Unlike the other three extensively-investigated types, out-of-plane DMI, as the last type that favours in-plane chirality, remained missing so far. Here we apply point-group-dependent DMI matrix analysis to show that out-of-plane DMI exists under reduced crystal symmetry. Through strain and structure engineering, we show how C s symmetry is realized in ultrathin magnets and observe the out-of-plane DMI stabilised in-plane chirality using spin-polarized electron microscopy. Our results show that extremely low out-of-plane DMI strengths at µeV/atom are sufficient to stabilise topological spin textures, including merons and bimerons. We also demonstrate field-induced reversible control of the in-plane chirality and merons. Our findings open up untapped paths on topological magnetic textures and their potential applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

A Deep Learning Approach for In-Network Synchrophasor Missing Data Recovery Using Programmable Network Switches

Phasor measurement unit (PMU) networks deliver accurate and timely measurements, which is essential for managing today’s electric power systems. To ensure data quality and enhance the cyber-resilience of PMU networks against malicious attacks and data errors, this study presents an online PMU missing data recovery scheme by leveraging P4 programmable switches. The data plane incorporates a customized PMU protocol parser that abstracts the necessary payload data for recovery. Recovery processes are executed in the control plane using a pre-trained machine learning model. Both traditional and advanced ML models, such as transformer and TimeGPT, are explicitly employed for data prediction. This approach ensures rapid and precise data recovery. Performance evaluations focus on recovery speed and accuracy, using a real dataset from a campus microgrid. With 20% missing PMU data, the mean absolute percentage error for voltage magnitude is 0.0384%, and the phase angle error discrepancy is approximately 0.4064%.

Phasor Measurement Unit, Machine Learning, Program↗
DOE OSTI2022

Positive spin Hall magnetoresistance in single-crystalline Pt/CoO(001) bilayers

Here, the spin Hall magnetoresistance (SMR) effect in single-crystalline Pt/CoO(001) bilayers has been systematically investigated. X-ray magnetic linear dichroism measurements prove that CoO antiferromagnetic (AFM) spins can be switched into the direction orthogonal to the applied field. We find the SMR signal is comprised of two components related to either the switching of CoO AFM Néel order or the applied strong field effect. Both SMR components show a “positive” angular dependence with $R_{∥} > R_{⊥}$, while $R_{∥} (R_{⊥})$ is defined as the resistance with the applied in-plane field parallel (perpendicular) to the current. The observed positive SMR is mainly attributed to the uncompensated spins at the Pt/CoO interface, instead of the CoO AFM spins. Our study may attract a great deal of interest to understand the complicated SMR effect in AFM spintronics materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Spontaneous Asymmetry of Chiral Magnetic Domains Within a Magnetic Field

Abstract Chiral magnetic domains are topological spin textures in which the Dzyaloshinskii–Moriya interaction assigns a given chirality to the domain walls. Notably, despite rapid progress in chiral magnetic research, one fundamental issue that remains unclear is how the chirality of chiral magnetic domains change as a magnetic field deforms the spin texture. Using spin‐polarized low energy electron microscopy, the evolution of Fe/Ni chiral magnetic stripe domains are investigated in single‐crystalline Fe/Ni/Cu/Co/Cu(001) multilayers in which the interlayer magnetic coupling between the Co and Fe/Ni films serves as an in‐plane magnetic field. Contrary to theoretical works, it is found that the chirality of the Néel walls results in a parallel alignment of the magnetic stripes with the in‐plane magnetic field direction. The transformation of chiral Néel walls into achiral Bloch walls can be precisely controlled by tuning the Cu spacer layer thickness. In addition, the domain wall exhibits a spontaneous asymmetry within the in‐plane magnetic field, leading to an unbalanced chirality between the left‐handed and right‐handed Bloch walls. These new results foster a better understanding of the chiral domain properties within a magnetic field.

Li, Qian↗
DOE OSTI2022

Ultrasensitive Sub-monolayer Palladium Induced Chirality Switching and Topological Evolution of Skyrmions

Chiral spin textures are fundamentally interesting, with promise for device applications. Stabilizing chirality is conventionally achieved by introducing Dzyaloshinskii-Moriya interaction (DMI) in asymmetric multilayers, where the thickness of each layer is at least a few monolayers. Here we report an ultrasensitive chirality switching in (Ni/Co) n multilayer induced by capping with only 0.22 monolayer of Pd. Using spin-polarized low-energy electron microscopy, we monitor the gradual evolution of domain walls from left-handed to right-handed Néel walls and quantify the DMI induced by the Pd capping layer. We also observe the chiral evolution of a skyrmion during the DMI switching, where no significant topological protection is found as the skyrmion winding number varies. This corresponds to a minimum energy cost of <1 attojoule during the skyrmion chirality switching. Here, our results demonstrate the detailed chirality evolution within skyrmions during the DMI sign switching, which is relevant to practical applications of skyrmionic devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Chirality-induced zigzag domain wall in in-plane magnetized ultrathin films

In this report the domain structure in in-plane magnetized Fe/Ni/W(110) films is investigated using spin-polarized low-energy electron microscopy. A novel transition of the domain wall shape from a zigzaglike pattern to straight is observed as a function of the film thickness, which is triggered by the transition of the domain wall type from the out-of-plane chiral wall to the in-plane Néel wall. The contribution of the Dzyaloshinskii-Moriya interaction to the wall energy is proposed to explain the transition of the domain wall shape, which is supported by Monte Carlo simulations.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Possible Topological Hall Effect above Room Temperature in Layered Cr 1.2 Te 2 Ferromagnet

Topological Hall effect (THE) has been used as a powerful tool to unlock spin chirality in novel magnetic materials. Recent focus has been widely paid to THE and possible chiral spin textures in two-dimensional (2D) layered magnetic materials. However, the room-temperature THE has been barely reported in 2D materials, which hinders its practical applications in 2D spintronics. In this paper, we report a possible THE signal featuring antisymmetric peaks in a wide temperature window up to 320 K in Cr 1.2 Te 2 , a new quasi-2D ferromagnetic material. The temperature, thickness, and magnetic field dependences of the THE lead to potential spin chirality origin that is associated with the spin canting under external magnetic fields. Furthermore, our work holds promise for practical applications in future chiral spin-based vdW spintronic devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Large Dzyaloshinskii-Moriya interaction induced by chemisorbed oxygen on a ferromagnet surface

The Dzyaloshinskii-Moriya interaction (DMI) is an antisymmetric exchange interaction that stabilizes chiral spin textures. It is induced by inversion symmetry breaking in noncentrosymmetric lattices or at interfaces. Recently, interfacial DMI has been found in magnetic layers adjacent to transition metals due to the spin-orbit coupling and at interfaces with graphene due to the Rashba effect. We report direct observation of strong DMI induced by chemisorption of oxygen on a ferromagnetic layer at room temperature. The sign of this DMI and its unexpectedly large magnitude—despite the low atomic number of oxygen—are derived by examining the oxygen coverage–dependent evolution of magnetic chirality. We find that DMI at the oxygen/ferromagnet interface is comparable to those at ferromagnet/transition metal interfaces; it has enabled direct tailoring of skyrmion’s winding number at room temperature via oxygen chemisorption. This result extends the understanding of the DMI, opening up opportunities for the chemisorption-related design of spin-orbitronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Antiferromagnetic domain switching modulated by an ultrathin Co interlayer in the Fe/Co/CoO/MgO(001) system

Using a combination of hysteresis loop, Kerr microscope, and x-ray magnetic circular dichroism measurements, in this study we investigated the antiferromagnetic (AFM) domain switching process modulated by the sub-nm thick Co inserting layer in a single crystalline Fe/Co/CoO/MgO(001). The CoO AFM domain switching occurs at lower temperature for the thicker Co interlayer, and the activation energy barrier of CoO AFM domain switching decreases as the Co interlayer thickness increases. The exchange coupling strength between the AFM spins in CoO layer and the ferromagnetic spins in the Fe/Co bilayer is found to be independent of the Co layer thickness. Our results suggest an approach to modulate the dynamic properties of AFM domains with an interfacial modification.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

In-plane Néel wall chirality and orientation of interfacial Dzyaloshinskii-Moriya vector in magnetic films

The interfacial Dzyaloshinskii-Moriya interaction (DMI) is of great interest as it can stabilize chiral spin structures in thin films. Experiments verifying the orientation of the interfacial DMI vector remain rare, in part due to the difficulty of separating vector components of DMI. In this study, Fe/Ni bilayers and Co/Ni multilayers were deposited epitaxially onto Cu(001) and Pt(111) substrates, respectively. By tailoring the effective anisotropy, spin reorientation transitions (SRTs) are employed to probe the orientation of the DMI vector by measuring the spin structure of domain walls on both sides of the SRTs. In our results, the interfacial DMI is found to be sufficiently strong to stabilize chiral Néel walls in the out-of-plane magnetized regimes, while achiral Néel walls are observed in the in-plane magnetized regimes. Furthermore, these findings experimentally confirm that the out-of-plane component of the DMI vector is insignificant in these fcc(001) and fcc(111) oriented interfaces, even in the presence of atomic steps.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Electron quantum interference in epitaxial antiferromagnetic NiO thin films

The electron reflectivity from NiO thin films grown on Ag(001) has been systematically studied as a function of film thickness and electron energy. A strong electron quantum interference effect was observed from the NiO film, which is used to derive the unoccupied band dispersion above the Fermi surface along the Γ-X direction using the phase accumulation model. The experimental bands agree well with first-principles calculations. A weaker electron quantum interference effect was also observed from the CoO film.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Ferroelectricity with Asymmetric Hysteresis in Metallic LiOsO 3 Ultrathin Films

Bulk LiOsO 3 was experimentally identified as a “ferroelectric” metal where polar distortions coexist with metallicity [Shi et al., Nat. Mater. 12, 1024 (2013)]. It is generally believed that polar displacements in a ferroelectric metal cannot be switched by an external electric field. Here, via comprehensive density functional theory calculations, we demonstrate that a two-unit cell-thick LiOsO 3 thin film exhibits a ferroelectric ground state having an out-of-plane electric dipole moment that can be switched by an external electric field. Moreover, its dipole moment-versus-electric field hysteresis loop is asymmetric because only surface Li ions’ displacements are reversed by the external electric field whereas the field-induced force on inner Li atoms is nearly fully screened by itinerant electrons. Here, as a relevant by-product of our study, we also extend the concept of “Born effective charge” to finite metallic systems, and show its usefulness to rationalize the observed effects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Magnetic domain wall contrast under zero domain contrast conditions in spin polarized low energy electron microscopy

Critical applications of spin polarized low energy electron microscopy (SPLEEM) employ this technique's vector imaging capability to resolve domain wall (DW) spin textures. Studying several thin film systems including Co/W(110), Co/Cu(001) and (Co/Ni) n /W(110), we demonstrate that an additional contrast can appear at magnetic DWs. By imaging the magnetization as a function of electron landing energy, electron energies are selected at which the magnetic domain contrast vanishes. Surprisingly, under such conditions of zero contrast between magnetic domains, we observe the appearance of magnetic contrast outlining the DWs. This DW contrast fails to depend on the DW spin texture. Instead, our measurements show that this DW contrast results from a combination of the energy-dependence of the spin reflectivity asymmetry of the magnetic film, the finite energy width of the spin polarized electron source, and the dispersion of the magnetic prism array that separates the illumination and imaging columns of the instrument. Awareness of this DW contrast mechanism is useful to aid correct interpretation of SPLEEM images.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2018

Exchange coupling torque in ferrimagnetic Co/Gd bilayer maximized near angular momentum compensation temperature

Highly efficient current-induced motion of chiral domain walls was recently demonstrated in synthetic antiferromagnetic (SAF) structures due to an exchange coupling torque (ECT). The ECT derives from the antiferromagnetic exchange coupling through a ruthenium spacer layer between the two perpendicularly magnetized layers that comprise the SAF. Here we report that the same ECT mechanism applies to ferrimagnetic bi-layers formed from adjacent Co and Gd layers. In particular, we show that the ECT is maximized at the temperature T A where the Co and Gd angular momenta balance each other, rather than at their magnetization compensation temperature T M . The current induced velocity of the domain walls is highly sensitive to longitudinal magnetic fields but we show that this not the case near T A . Our studies provide new insight into the ECT mechanism for ferrimagnetic systems. The high efficiency of the ECT makes it important for advanced domain wall based spintronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗