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Cheng, Li-Jen

Publications and source records attributed to Cheng, Li-Jen.

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Spatial light modulation in compound semiconductor materials

Spatial light modulation (22) in a III-V single crystal (12), e.g., gallium arsenide, is achieved using the photorefractive effect. Polarization rotation created by beam coupling is utilized in one embodiment. In particular, information (16)on a control beam (14) incident on the crystal is transferred to an input beam (10), also incident on the crystal. An output beam (18) modulated in intensity is obtained by passing the polarization-modulated input beam through a polarizer (20).

Cheng, Li-Jen↗
NASA NTRS1990

Properties and applications of photorefractive GaAs

Photorefractive semiconductors have the attractive features of fast response times and operation at near-infrared wavelengths. This has opened some new research opportunities in the field of photorefractive nonlinear optics which is significant for applications in real-time image processing and optical computing. This paper presents recent experimental demonstrations of several basic optical information processing techniques using photorefractive GaAs crystals. The results of these demonstrations illustrate that photorefractive compound semiconductors has a great potential as a new medium for light beam interaction based on the dynamic holographic principle.

Cheng, Li-Jen↗
NASA NTRS1990

Real-time optical correlator using photorefractive GaAs

A real-time optical correlator based on GaAs and liquid-crystal TV (LCTV) is demonstrated. The demonstrated system has a video-frame rate limited by the speed of the LCTVs; if faster spatial-light modulators are used, the potential frame rate of a GaAs-based correlator can be as fast as 1000 frames/sec under experimental conditions. Comparisons are made between VanderLugt and joint transform and between degenerate and nondegenerate four-wave mixing. The edge-enhancement effect and the Bragg diffraction effect are discussed.

Liu, Duncan T. H.↗
NASA NTRS1990

Acousto-optic tunable filter (AOTF) imaging spectrometer for NASA applications - System issues

A recently developed AOTF operating in the visible, 0.4-0.8 micron bandpass is presently compared with other spectrometer designs, with a view to the advantages it may uniquely offer for prospective NASA missions. Since spectral identification is accomplished by this system through the scanning of a few spectral bands, data storage requirements for spectral image analysis can be significantly reduced. Attention is given to spectral and imaging capabilities and their applicability to defense, remote sensing, and industrial uses.

Yu, Jeffrey↗
NASA NTRS1989

Integrated Semiconductor/Optical Information Processors

Optical information processors made of integrated three-dimensional devices which include optical, electro-optical, and electronic devices. Integration achieved by combination and extension of advanced semiconductor (integrated-circuit) and integrated-optics technology. In integrated device, spatial light modulator fabricated on surface of chip. Leads to miniaturization of sophisticated optical information-processing systems.

Cheng, Li-Jen↗
NASA NTRS1989

Two-beam coupling gain in undoped GaAs with applied dc electric field and moving grating

Experimental results of two-beam coupling gain efficiency in an undoped, semiinsulating GaAs crystal are reported. The highest gain coefficient measured is about 4.5/cm under the condition of an applied electric field of 13 kV/cm and a grating periodicity of 20 microns. The experimental results and theoretical calculations are in reasonable agreement with each other.

Liu, Duncan T. H.↗
NASA NTRS1989

Optical Processing With Photorefractive Semiconductors

Experimental phase-conjugate four-wave-mixing apparatus used to demonstrate capabilities of GaAs (and potentially of other photorefractive semiconductors like InP and CdTe) for optical processing of information. With modifications, performs any of three basic image-processing functions: transfer to different light beam, enhancement of edges, and autocorrelation. Includes crystal of GaAs of 5 by 9 by 9 mm with cubic crystalline axes. Advantages include high speed and compatibilty with other semiconductor devices.

Cheng, Li-Jen↗
NASA NTRS1989

Polarization properties of degenerate four-wave mixing in GaAs

The effect of an applied dc electric field on beam-polarization properties of degenerate four-wave mixing in GaAs is investigated. The results can be interpreted in terms of the phase retardation arising from the applied electric field and the light-induced periodic space-charge field. The conditions for attaining a cross-polarized diffracted beam and read beam are discussed. The experimental results agree reasonably well with the theoretical calculations for an applied voltage of 6 kV.

Liu, Duncan T.↗
NASA NTRS1989

Spatial Modulation Of Light In GaAs

Spatial modulation of light in gallium arsenide demonstrated by transferring image from one of two coherent, crossing beams of light to other one. Technique relies on cross-polarization beam coupling, product of photorefractive effect in GaAs crystal.

Cheng, Li-Jen↗
NASA NTRS1989

Tailorable infrared sensing device with strain layer superlattice structure

An infrared photodetector is formed of a heavily doped p-type Ge(x)Si(1-x)/Si superlattice in which x is pre-established during manufacture in the range 0 to 100 percent. A custom tailored photodetector that can differentiate among close wavelengths in the range of 2.7 to 50 microns is fabricated by appropriate selection of the alloy constituency value, x, to establish a specific wavelength at which photodetection cut-off will occur.

Cheng, Li-Jen↗
NASA NTRS1989

Dynamic-Range Compression For Infrared Imagery

Photorefractive crystals covering detectors prevent saturation. To make full use of information in image, desirable to compress dynamic range of input intensity to within region of approximately linear response of detector. Dynamic-range compression exhibited by measurements of attenuation in photorefractive GaAs. Effective dynamic-range-compressor plate, film, or coating reduces apparent contrast of scene imaged on detector plane to within dynamic range of detectors; original image contrast or intensity data recovered subsequently in electronic image processing because range-compression function and inverse known.

Cheng, Li-Jen↗
NASA NTRS1988

Matrix-vector multiplication in thin photorefractive GaAs crystals

Optical matrix-vector multiplication using four-wave mixing in a thin photorefractive GaAs crystal is demonstrated. Using a thin wafer of GaAs offers the potential to integrate the encoding spatial light modulators directly on the wave-mixing medium.

Cheng, Li-Jen↗
NASA NTRS1988

Photorefractive gain in GaAs under a dc electric field

This paper reports on the first observation of a photorefractive gain coefficient as high as 2.6/cm in the undoped liquid-encapsulated Czochralski-grown GaAs crystals at 1.06 microns under a dc electric field of 13 kV/cm without using the moving grating technique.The absorption coefficient of the crystals used is 1.3/cm, showing that a net gain has been achieved. This measured gain coefficient is close to the predicted theoretical value.

Liu, Duncan T. H.↗
NASA NTRS1988

Optical correlators with fast updating speed using photorefractive semiconductor materials

The performance of an updatable optical correlator which uses a photorefractive semiconductor to generate real-time matched filters is discussed. The application of compound semiconductors makes possible high-speed operation and low optical input intensities. The Bragg diffraction is considered, along with the speed and power characteristics of these materials. Experimental results on photorefractive GaAs are presented.

Gheen, Gregory↗
NASA NTRS1988

Index grating lifetime in photorefractive GaAs

The index grating lifetime in liquid encapsulated Czochralski-grown undoped semi-insulating GaAs was measured using a beam coupling technique. The largest lifetime measure was about 8 s under a read beam intensity of 0.7 mW/sq cm with the grating periodicity being 0.63 microns. The measured value decreases to milliseconds as the read beam intensity and the grating periodicity increase to about 10 mW/sq cm and 4 microns, respectively. This range of grating lifetime in this material is adequate for its use in real-time spatial light modulators, reconfigurable beam steering devices, and dynamic memory elements, for optical computing. In addition, the results suggest that the lifetime is sensitive to residual imperfections in the crystal.

Cheng, Li-Jen↗
NASA NTRS1988

A chemical/microwave technique for the measurement of bulk minority carrier lifetime in silicon wafers

A chemical/microwave technique for the measurement of bulk minority carrier lifetime in silicon wafers is described. This method consists of a wet chemical treatment (surface cleaning, oxidation in solution, and measurement in HF solution) to passivate the silicon surfaces, a laser diode array for carrier excitation, and a microwave bridge measuring system which is more sensitive than the microwave systems used previously for lifetime measurement. Representative experimental data are presented to demonstrate this technique. The result reveals that this method is useful for the determination of bulk lifetime of commercial silicon wafers.

Luke, Keung L.↗