Infrared pre-detection dynamic range compression via photorefractive crystals
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Liu, Hua-Kuang↗
Engineering topics
Cheng, Li-Jen
Publications and source records attributed to Cheng, Li-Jen.
Infrared predetection dynamic range compression via photorefractive crystals
The theoretical basis and practical implementation of a predetection dynamic-range compression technique for IR sensor systems are discussed. The approach takes advantage of the nonlinear intensity dependence of the gain coefficient in photorefractive crystals. Its feasibility is demonstrated in numerical computations using the experimental data of Cheng and Partovi (1986) on two-wave mixing in GaAs at 1.15 micron wavelength.
Liu, Hua-Kuang↗
Cross-polarization beam coupling in photorefractive GaAs crystals
Theoretical and experimental investigations on the cross-polarization coupling of two contradirectional laser beams in a photorefractive GaAs crystal are reported. There is good agreement between these results.
Cheng, Li-Jen↗
Tailorable infrared sensing device with strain layer superlattice structure
An infrared photodetector is formed of a heavily doped p-type Ge sub x Si sub 1-x/Si superlattice in which x is pre-established during manufacture in the range 0 to 100 percent. A custom-tailored photodetector that can differentiate among close wavelengths in the range of 2.7 to 50 microns is fabricated by appropriate selection of the alloy constituency value, x, to establish a specific wavelength at which photodetection cutoff will occur.
Cheng, Li-Jen↗
Image processing by four-wave mixing in photorefractive GaAs
Three image processing experiments were performed by degenerate four-wave mixing in photorefractive GaAs. The experiments were imaging by phase conjugation, edge enhancement, and autocorrelation. The results show that undoped, semiinsulating, liquid-encapsulated Czochralski-grown GaAs crystals can be used as effective optical processing media despite their small electrooptic coefficient.
Gheen, Gregory↗
Image transfer in photorefractive GaAs
Image transfer from one beam to the other using counterpropagation beam coupling in GaAs was demonstrated. Good image quality was achieved. The results also reveal that local birefringence due to the residual stress/strain field in the crystal can degrade the image quality.
Cheng, Li-Jen↗
Spatial light modulation by beam coupling in GaAs crystals
The first demonstration of spatial light modulation in GaAs using the photorefractive effect is reported. A special configuration was employed in which polarization rotation created by beam coupling was utilized. The ability to obtain these results despite a small coupling gain coefficient demonstrates the usefulness of the polarization technique presented here for optical processing with GaAs crystals.
Cheng, Li-Jen↗
Enhanced beam coupling modulation using the polarization properties of photorefractive GaAs
Observation is reported of a rotation in the polarization of the two photorefractive recording beams in GaAs for a configuration with the internally generated space-charge field along the line 110 crystallographic orientation. This rotation is a result of simultaneous constructive and destructive beam coupling in each beam for the optical electric field components along the two electrooptically induced principal dielectric axes of the crystal. By turning one of the beams on and off, the intensity of the other beam after the crystal and a polarization analyzer can be modulated by as much as 500 percent. This result is of particular importance for optical information processing applications.
Partovi, Afshin↗
Floating emitter solar cell
A front surface contact floating emitter solar cell transistor is provided in a semiconductor body (n-type), in which floating emitter sections (p-type) are diffused or implanted in the front surface. Between the emitter sections, a further section is diffused or implanted in the front surface, but isolated from the floating emitter sections, for use either as a base contact to the n-type semiconductor body, in which case the section is doped n+, or as a collector for the adjacent emitter sections.
Chih, Sah↗
Analysis of the interaction of a laser pulse with a silicon wafer - Determination of bulk lifetime and surface recombination velocity
The decay of excess minority carriers produced in a silicon wafer of thickness d by a laser pulse is analyzed. A comprehensive theory based on this analysis is presented for the determination of bulk lifetime Tau(b) and surface recombination velocity S. It is shown that, starting with an exponential spatial profile, the carrier profile assumes a spatially symmetrical form after approximately one time constant of the fundamental mode of decay. Expressions for the spatial average of the carrier density as a function of time are derived for three temporal laser pulse shapes: impulse, square, and Gaussian. Particular attention is paid to the time constants of the fundamental and higher modes of decay. The ratios of the time constants of the higher modes to the fundamental mode, as well as the time constant of the fundamental mode, are presented over wide ranges of values of S and d. For Sd less than about 40 sq cm/s, a two-wafer method is developed to determine Tau(b) and S; it is also shown that the requirement of d/Tau(b) greater than about 20S is sufficient to adequately guarantee that the asymptotic value of the instantaneous observed lifetime differs from the bulk lifetime by no more than 10 percent.
Luke, Keung L.↗
Temperature and intensity dependence of photorefractive effect in GaAs
The photorefractive effect in semi-insulating Cr-doped GaAs as measured by the beam coupling technique was investigated as functions of temperature (295-386 K) and intensity (0.15-98 mW/sq cm of 1.15-micron light beams from a He-Ne laser). Results show that the photorefractive effect deteriorates rapidly over a narrow range of temperature as temperature rises, and that this characteristic temperature increases with the logarithm of beam intensity. The observed phenomenon is attributed to the competing effects of the dark- and light-induced conductivities.
Cheng, Li-Jen↗