Engineering topics

Cockrum, R. H.

Publications and source records attributed to Cockrum, R. H..

6 records

NASA NTRS1982

A system for measuring thermal activation energy levels in silicon by thermally stimulated capacitance

One method being used to determine energy level(s) and electrical activity of impurities in silicon is described. The method is called capacitance transient spectroscopy (CTS). It can be classified into three basic categories: the thermally stimulated capacitance method, the voltage-stimulated capacitance method, and the light-stimulated capacitance method; the first two categories are discussed. From the total change in capacitance and the time constant of the capacitance response, emission rates, energy levels, and trap concentrations can be determined. A major advantage of using CTS is its ability to detect the presence of electrically active impurities that are invisible to other techniques, such as Zeeman effect atomic absorption, and the ability to detect more than one electrically active impurity in a sample. Examples of detection of majority and minority carrier traps from gold donor and acceptor centers in silicon using the capacitance transient spectrometer are given to illustrate the method and its sensitivity.

Cockrum, R. H.↗

NASA NTRS1981

Improving MOS minority-carrier lifetime

Fluorine implantation increases minority-carrier lifetime in silicon by factor of 100, enhancing power efficiency in MOS applications. Implantation does not increase microdefects at silicon surface when thin oxide layers are grown, and process gathers existing impurities near surface without adversely affecting MOS electrical parameters. With these advantages, fluorine may be left on wafer surfaces after processing.

Cockrum, R. H.↗

NASA NTRS1980

Measuring radiation effects on MOS capacitors

Electron injection technique serves as powerful probe of trapped hole distribution after irradiation because it was determined that electrons only annihilate trapped holes. Other effects, such as other electron traps and interface state generation, are negligible in injection range used. Trap cross sections and densities indicate at least three trap species; interfacial species, dominant bulk species determined to tail off from silicon interface, and lower density and cross section species that may be distributed throughout bulk of oxide.

Bakowski, M.↗

NASA NTRS1978

Trapping effects in irradiated and avalanche-injected MOS capacitors

The trapping parameters for holes, and for electrons in the presence of trapped holes, have been measured from a set of wafers with different oxide thickness processed under controlled conditions. The trap cross-sections and densities indicate at least three trap species, including an interfacial species, a dominant bulk species which is determined to tail off from the silicon interface, and a third, lower density bulk species that is distributed throughout the oxide.

Bakowski, M.↗

NASA NTRS1978

Automated tester for MOS devices

Automated system rapidly diagnoses MOS integrated circuits. Its programed electronics investigate transistor and cell characteristics to compile data needed for screening. Program can be changed rapidly to alter test procedures, test duration, and precision.

Cockrum, R. H.↗

NASA NTRS1977

The effect of oxidation-expanded defects upon MOS parameters

Implantation of Ne ions was chosen as a means of introducing a uniformly distributed quantitatively controllable and reproducible amount of microdefects at the silicon surface. Each wafer was ion-implanted on one half of its surface, the other half remaining as a control. Seven implant fluences from 1 trillion to 5 by 10 to the 14th power Ne ions/sq cm were used. The fluences, as well as the concentrations of defects expanded by the subsequent gate oxidation, were correlated with seven different MOS parameters. For implant fluences of 10 to the 14th power per sq cm and above, increasing stacking-fault densities were found. The oxide defect density associated with time-dependent breakdown increased significantly with Ne dose. The presence of oxidation-expanded defects drastically increases the surface-generation velocity and decreases the bulk lifetime. Slight increases in flatband voltage and surface-state density occurred only for the wafers having the greatest defect concentrations. Oxidation of a P-containing damaged silicon surface results in a greater pileup of P at the surface than occurs for the oxidation of a similar but undamaged surface. It appears that the expanding defects restrain the diffusion of P inward from the surface.

Prussin, S.↗