High temperature gallium phosphide rectifiers
Development of high reverse breakdown voltage and low forward voltage drop stability in high power Schottky GaP rectifier for high temperature application is reported.
Craford, M. G.↗
Engineering topics
Craford, M. G.
Publications and source records attributed to Craford, M. G..
Development of high temperature gallium phosphide rectifiers
Large area high performance, GaP rectifiers were fabricated by means of Zn diffusion into vapor phase epitaxial GaP. Devices with an active area of 0.01 sq cm typically exhibit forward voltages of 3 volts for a bias current of 1 ampere and have reverse breakdown voltages of 300 volts for temperatures from 27 C to 400 C. Typical device reverse saturation current at a reverse bias of 150 volts is less than 10 to the minus 9th power amp at 27 C and less than 0.000050 amp at 400 C.
Craford, M. G.↗