Evidence for reduction of noise and radiation effects in G4-FET depletion-all-around operation
The low noise and radiation-hard operation of the SOI Four-Gate transistor (G4-FET) is eperimentally demonstrated.
SOI CMOS↗
Engineering topics
Cristoloveanu, S.
Publications and source records attributed to Cristoloveanu, S..
A novel four-quadrant analog multiplier using SOI four-gate transitors (G4-FETs)
A novel analog muliplier using SOI four-gate transistors (G4-FETs) is presented. Thanks to the multiple inputs of the G4-FET that may be biased independently, the number of transistors in the proposed circuit is dramatically reduced, compared to conventional single-gate MOSFET based multipliers.
SOI CMOS↗
Saturation current model for the N-channel Gsup4-FET
A new saturation current model is presented for the n-channel G4-FET, a novel 4-gate transistor.
neuro-prosthetic devices cortical signals↗
Radiation induced degradation of SOI n-channel LDMOSFETs
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silicon on insulator SOI↗