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NASA NTRS · 20060039964

Saturation current model for the N-channel Gsup4-FET

Abstract

A new saturation current model is presented for the n-channel G4-FET, a novel 4-gate transistor.

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BibTeXRIS

Dufrene, B., Blalock, B., Cristoloveanu, S., Mojarradi, M., Kolawa, E. A.. 2003-04-27. Saturation current model for the N-channel Gsup4-FET. https://ntrs.nasa.gov/citations/20060039964

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