Evidence for reduction of noise and radiation effects in G4-FET depletion-all-around operation
The low noise and radiation-hard operation of the SOI Four-Gate transistor (G4-FET) is eperimentally demonstrated.
SOI CMOS↗
Engineering topics
Dufrene, B.
Publications and source records attributed to Dufrene, B..
Saturation current model for the N-channel Gsup4-FET
A new saturation current model is presented for the n-channel G4-FET, a novel 4-gate transistor.
neuro-prosthetic devices cortical signals↗
Complemenary body driving - a low voltage analog circuit technique for SOI
This paper describes several analog circuit primitives that utilize the body terminal as a signal port. A cascode current mirror that can operate with an input and output voltage of 200 mV; and a rail-to-rail, constant transconductance gain block capable of 1 V operation are presented. These circuits have been implemented in a standard 0.35~1 partially-depleted Silicon-on-Insulator (PDSOI) CMOS process and should find wide application in next-generation analog circuit designs.
neuro-prosthetic devices cortical signals↗