Engineering topics
Publications and source records attributed to Crouch, R. K..
Quartz vacuum ampoule confines corrosive sample wafer between two quartz plugs inserted in quartz tube. One quartz plug is window for measuring sample thermodynamic properties while laser pulse entering other quartz plug heats sample to molten state. Confinement of sample in vacuum prevents contamination of measurement system by hot corrosive vapors and any interference by preferential evaporation of melt.
Bridgman-growth ampoule has molybdenum-to-quartz feedthroughs at both ends. Ampoule is vacuum-tight, protects exposed areas of furnace from corrosive vapors emanating from sample and at same time prevents changes in composition of melt due to preferential vaporization of one of components.
The solutal diffusion coefficient has been determined for liquid lead telluride-tin telluride using a modified shear cell technique. Postdiffusion concentration profiles are presented for several diffusion couples. The best analytical curve fit to the data gives a composition-dependent diffusion coefficient of (/3/7/ to the C power) x 0.00014 sq cm/sec, where C is the PbTe concentration. In addition, data are presented to show the importance of solutal convection in the lead-tin-telluride system.
A study of the effects of convection on the quality of crystals grown by the Bridgman technique has been initiated. This study is to provide a basis for the utilization of the low-gravity environment furnished by the Space Shuttle in the development of crystals with a better quality than obtainable under terrestrial conditions. A series of ground-based studies has been started with the objective to optimize the results of Shuttle experiments. A description is presented of preliminary results of some of these studies. Attention is given to a thermo-solutal convection analysis, the development of a technique for interface demarcation, the growth of Pb(1-x)Sn(x)Te crystals, thermophysical property measurements, and solutal diffusion coefficients.
A growth ampoule for protecting the furnace lining and to prevent a change in the composition of the melt during growth of Pb-T-Te or Ge semiconductors doped with Ga is described. Mo foil is inserted into a quartz tube and sealed at the ends. A vacuum pumping system collapses the tube onto the foil. Spotwelded Mo wires lead in two directions from the collapsed section through quartz capillaries, one of which is also collapsed, on the wire, which provides a contact point for seeded growth of the semiconductor. The ampoule has been used for Bridgeman growth of crystals using a hot zone of 1150 C, with a temperature gradient of 240 C/m, and with current pulses up to 40 A/sq cm.
This paper summarizes the results of a series of studies dealing with crystal growth from the melt and in particular, the growth of the narrow bandgap semiconductor PbSnTe by the Bridgman technique. Theoretical calculations have shown that for low Prandtl number fluids such as semiconductors, convection has no effect on the temperature field in the melt but has a significant effect on the compositional field. They also show that convective flow will exist in a Bridgman growth system on earth, even in the 'thermally stable' configuration. Measurements of the specific heat have been made up to temperatures of 722 C. The thermal diffusivity has been measured up to 1010 C which includes values for the melt. The interdiffusion coefficients for PbTe and SnTe in the melt have been determined. A technique has been developed and tested which provides a vacuum tight quartz ampoule with electrical feedthroughs for interface demarcation studies during the Bridgman growth. Analysis of crystals grown has indicated that the PbSnTe system is solutally unstable and the distribution of SnTe in the crystal, after an anomalous first to freeze region, follows that predicted by Pfann for convection controlled growth. Studies of the amount of supercooling in PbSnTe indicate that this may explain an anomalous composition distribution in the first to freeze region of an unseeded growth.
The effect of solid-liquid interface shape on lateral solute segregation during steady-state unidirectional solidification of a binary mixture is calculated under the assumption of no convection in the liquid. A finite element technique is employed to compute the concentration field in the liquid and the lateral segregation in the solid with a curved boundary between the liquid and solid phases. The computational model is constructed assuming knowledge of the solid-liquid interface shape; no attempt is made to relate this shape to the thermal field. The influence of interface curvature on the lateral compositional variation is investigated over a range of system parameters including diffusivity, growth speed, distribution coefficient, and geometric factors of the system. In the limiting case of a slightly nonplanar interface, numerical results from the finite element technique are in good agreement with the analytical solutions of Coriell and Sekerka obtained by using linear theory. For the general case of highly non-planar interface shapes, the linear theory fails and the concentration field in the liquid as well as the lateral solute segregation in the solid can be calculated by using the finite element method.
The thermal diffusivity of Ge has been measured over a temperature range from 300 C to 1010 C which includes values for the melt. Specific heat has been measured from room temperature to 727 C. Thermal conductivity has been calculated over the same temperature range as the diffusivity measurements. These data are reported along with the best values from the literature for the other parameters which are required to calculate the temperature and convective fields for the growth of germanium by the Bridgman method. These parameters include the specific heat, the viscosity, the emissivity, and the density as a function of temperature.
Crystals of the intermetallic compound Pb1-xSnxTe will be grown in furnaces on the Space Shuttle. The reasons for conducting this growth in space, the program of investigation to develop the space experiment and the requirements that are placed on the Space Shuttle furnace are discussed. Also included are relevent thermophysical properties of Pb1-xSnxTe to the degree which they are known.
Improvement of the previously reported photocapacitive MIS infrared detectors has led to the development of exceptional room-temperature devices. Unoptimized peak detectivities on the order of 10 to the 13th cm sq rt Hz/W, a value which exceeds the best obtainable from existing solid-state detectors, have now been consistently obtained in Si and GaAs devices using high-capacitance LaF3 or composite LaF3/native-oxide insulating layers. The measured spectral response of representative samples is presented and discussed in detail together with a simple theory which accounts for the observed behavior. The response of an ideal MIS photocapacitor is also contrasted with that of both a conventional photoconductor and a p-i-n photodiode, and reasons for the superior performance of the MIS detectors are given. Finally, fundamental studies on the electrical, optical, and noise characteristics of the MIS structures are analyzed and discussed in the context of infrared-detector applications.
Lightly doped semiconductor device, with transparent insulating layer based on capacitive response to radiant energy, exhibits excellent sensitivities at room temperature.
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Solo pilot's task is made easier through convenient display of landing and navigation data. Use of display shows promise as more efficient means of presenting sequential instructions and data, such as course heading, altitude, and radio frequency, to minimize pilot's workload during solo instrument flight.
Thin films of LaF3 deposited on Si or GaAs substrates have been observed to form blocking contacts with very high capacitances. This results in comparatively hysteresis-free and sharp C-V (capacitance-voltage) characteristics for MIS structures. Such structures have been used to study the interface states of GaAs with increased resolution and to construct improved photocapacitive infrared detectors.
The compound semiconductor material PbSnTe has been investigated by NASA Langley Research Center as part of the Material Processing in Space (MPS) experiment in the framework of the Space Shuttle program. The long-range goal of the research is the improving of the performance of infrared detectors for use in remote sensing experiments. Three distinct techniques will be used in the low-g environment of space: two techniques involving bulk growth from melt and a vapor growth technique. In order to establish realistic estimates of the required time for experiments and to determine the thermal gradients that will be required to avoid constitutional supercooling, the diffusion coefficients must be accurately measured, however more data especially in the vapor-solid phase relations are needed.
A display employing light emitting diodes (LED's) was developed to demonstrate the feasibility of such displays for presenting landing and navigation information to reduce the workload of general aviation pilots during IFR flight. The display consists of a paper tape reader, digital memory, control electronics, digital latches, and LED alphanumeric displays. A presentable digital countdown clock-timer is included as part of the system to provide a convenient means of monitoring time intervals for precise flight navigation. The system is a limited capability prototype assembled to test pilot reaction to such a device under simulated IFR operation. Pilot opinion indicates that the display is helpful in reducing the IFR pilots workload when used with a runway approach plate. However, the development of a compact, low power second generation display was recommended which could present several instructions simultaneously and provide information update capability. A microprocessor-based display could fulfill these requirements.
Epitaxial growth of GaN on sapphire substrates using an open-tube growth furnace has been carried out to study the effects of substrate orientation and transfer gas upon the properties of the layers. It has been found that for the (0001) substrates, surface appearance was virtually independent of carrier gas and of doping levels. For the (1(-1)02) substrates surface faceting was greatly reduced when He was used as a transfer gas as opposed to H2. Faceting was also reduced when the GaN was doped with Zn, and the best surfaces for the (1(-1)02) substrates were obtained in a Zn-doped run using He as the transfer gas. The best sample in terms of electrical properties for the (1(-1)02) substrate had a mobility greater than 400 sq cm/V per sec and a carrier concentration of about 10 to the 17th per cu cm. This sample was undoped and used He as the transfer gas. The best (0001) sample was also grown undoped with He as the transfer gas and had a mobility of 300 sq cm/V per sec and a carrier concentration of 1 x 10 to the 18th per cu cm.
A new class of room-temperature infrared detectors has been developed through use of metal-insulator-semiconductor (MIS) or metal-insulator-semiconductor-insulator-metal (MISIM) slabs. The detectors, which have been fabricated from Si, Ge and GaAs, rely for operation on the electrical capacitance variations induced by modulated incident radiation. The peak detectivity for a 1000-A Si MISIM detector is comparable to that of a conventional Si detector functioning in the photovoltaic mode. Optimization of the photocapacitive-mode detection sensitivity is discussed.