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Crouch, R. K.

Publications and source records attributed to Crouch, R. K..

45 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Evaluation of commercial pyroelectric detectors

A series of commercially available pyroelectric detectors made from PVF2, LTO, SBN, and TGS were evaluated in terms of responsivity and detectivity as a function of frequency. The performance of the detectors evaluated was very different, depending upon the manufacturer of the detector, and this dependency was primarily related to the thickness of the various detectors. The best detectors of each material were comparable in performance at frequencies around 10 Hz but differed radically at frequencies above 100 Hz.

Robertson, J. B.↗
NASA NTRS1977

Solid-state turn-coordinator display

Light emitting diodes are employed in displays for aircraft instrument applications. Device offers three levels of brightness to compensate for varying degrees of ambient light present in cockpit.

Crouch, R. K.↗
NASA NTRS1975

Solid-state turn coordinator display

A solid state turn coordinator display which employs light emitting diodes (LED's) as the display medium was developed to demonstrate the feasibility of such displays for aircraft applications. The input to the display is supplied by a fluidic inertial rate sensor used in an aircraft wing leveler system. The display is composed of the LED radial display face and the electronics necessary to address and drive the individual lines of LED's. Three levels of brightness are provided to compensate for the different amounts of ambient light present in the cockpit.

Meredith, B. D.↗
NASA NTRS1973

Vapor phase growth of group 3, 4, and 5 compounds by HCl transport of elements

Technique has been devised for vapor-phase epitaxial growth of group 3, 4, and 5 binary, ternary, or quaternary compounds by HCl transport of the constituent elements or dopants. Technique uses all the constituents of the alloy system in their elemental form. Transport of these elements by an HCl + H2 carrier gas facilitates their transport as subchlorides.

Tyagi, R. C.↗
NASA NTRS1972

A study of beryllium and beryllium-lithium complexes in single crystal silicon

When beryllium is thermally diffused into silicon, it gives rise to acceptor levels 191 MeV and 145 meV above the valence band. Quenching and annealing studies indicate that the 145-MeV level is due to a more complex beryllium configuration than the 191-MeV level. When lithium is thermally diffused into a beryllium-doped silicon sample, it produces two acceptor levels at 106 MeV and 81 MeV. Quenching and annealing studies indicate that these levels are due to lithium forming a complex with the defects responsible for the 191-MeV and 145-MeV beryllium levels, respectively. Electrical measurements imply that the lithium impurity ions are physically close to the beryllium impurity atoms. The ground state of the 106-MeV beryllium level is split into two levels, presumably by internal strains. Tentative models are proposed.

Crouch, R. K.↗
NASA NTRS1972

Study of beryllium and beryllium-lithium complexes in single-crystal silicon.

When beryllium is thermally diffused into silicon, it gives rise to acceptor levels 191 and 145 meV above the valence band. Quenching and annealing studies indicate that the 145-meV level is due to a more complex beryllium configuration than the 191-meV level. When lithium is thermally diffused into a beryllium-doped silicon sample, it produces two new acceptor levels at 106 and 81 meV. Quenching and annealing studies indicate that these new levels are due to lithium forming a complex with the defects responsible for the 191- and 145-meV beryllium levels, respectively. Electrical measurements imply that the lithium impurity ions are physically close to the beryllium impurity atoms. The ground state of the 106-meV beryllium-lithium level is split into two levels, presumably by internal strains. Tentative models are proposed to explain these results.

Crouch, R. K.↗