Curved focal plane arrays
Explore the source record for details and available documents.
focal plane arrays imaging spectroscopy↗
Engineering topics
Cunningham, T. J.
Publications and source records attributed to Cunningham, T. J..
Solid state UV detectors
Explore the source record for details and available documents.
UV detectors Origins solid state devices microchan↗
Reset noise suppression in two-dimensional CMOS photodiode pixels through column-based feedback-reset
We present new CMOS photodiode imager pixel with ultra-low read noise through on-chip suppression of reset noise via column-based feedback circuitry. The noise reduction is achieved without introducing any image lag, and with insignificant reduction in quantum efficiency and full well.
CMOS noise noise reduction↗
Space qualification of photonic devices
Key optimal elements for space qualification plans of photonic devices are overviewed. Device parameters and qualifying procedures were discussed to assure the reliability of newly developed photonic devices needed for potential usage in space environments.
space↗
Two-dimensional active pixel InGaAs focal plane arrays
Switching and amplifying characteristics of a newly developed two-dimesnional InGaAs Active Pixel Imager Array are presented.
two-dimensional↗
Ultrastable and uniform EUV and UV detectors
In this paper we will discuss the performance of delta-doped CCDs in UV and EUV, our in-house thinning capability, bonding approaches for producing flat focal plane arrays, and in-house capabilities of directly applied antireflection coatings.
EUV↗
Delta-doped imagers for UV and EUV applications
In this paper we will discuss performance of delta-doped CCDs in UV and EUV, our in-house thinning capability, bonding approaches for producing flat focal plane arrays, and in-house capabilities of directly applied antireflection coatings.
UV EUV delta-doped imagers↗
Delta-doped imagers for UV and EUV applications
Explore the source record for details and available documents.
delta-doped imagers UV EUV↗
Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array
Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.
Kim, Q.↗
Characteristics of Monolithically Integrated InGaAs Active Pixel Image Array
Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate.
Active Pixel Imager Dual (Visible/IR) responses Ac↗
Advances in Discrete GaAs JFETs and Simple Amplifiers for Deep Cryogenic Readouts
The progress of the Jet Propulsion Laboratory in developing gallium arsenide junction field-effect transistors (GaAs JFETs) for application in infrared readout electronics operating below 10 Kelvin is discussed.
cryogenic readout gallium arsenide junction field-↗
Readout Characteristics of Integrated Monolithic InGaAs Active Pixel Sensor Array
A newly fabricated Monolithic InGaAs Active Pixel Image Sensor is presented, and its readout characteristics are described.
Readout↗
Monolithic InGaAs JFET Active Pixel Tunable Image Sensor (MAPTIS)
A new Monolithic InGaAs Active Pixel Multispectral Image Sensor is described. This Infrared sensor will utilize high quality InGaAs grown by Molecular Beam Epitaxy on InP substrate for the fabrication of a high speed Junction Field Effect Transistor array.
hyper↗