NASA NTRS · 20210004950
Monolithic InGaAs JFET Active Pixel Tunable Image Sensor (MAPTIS)
Abstract
A new Monolithic InGaAs Active Pixel Multispectral Image Sensor is described. This Infrared sensor will utilize high quality InGaAs grown by Molecular Beam Epitaxy on InP substrate for the fabrication of a high speed Junction Field Effect Transistor array.
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Fossum, E. R., Cunningham, T. J., Kim, Q.. 1997-02-08. Monolithic InGaAs JFET Active Pixel Tunable Image Sensor (MAPTIS). https://ntrs.nasa.gov/citations/20210004950
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