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Kim, Q.

Publications and source records attributed to Kim, Q..

At least 19 records

Space Qualification Test of a-Silicon Solar Cell Modules

The basic requirements of solar cell modules for space applications are generally described in MIL-S-83576 for the specific needs of the USAF. However, the specifications of solar cells intended for use on space terrestrial applications are not well defined. Therefore, this qualifications test effort was concentrated on critical areas specific to the microseismometer probe which is intended to be included in the Mars microprobe programs. Parameters that were evaluated included performance dependence on: illuminating angles, terrestrial temperatures, lifetime, as well as impact landing conditions. Our qualification efforts were limited to these most critical areas of concern. Most of the tested solar cell modules have met the requirements of the program except the impact tests. Surprisingly, one of the two single PIN 2 x 1 amorphous solar cell modules continued to function even after the 80000G impact tests. The output power parameters, Pout, FF, Isc and Voc, of the single PIN amorphous solar cell module were found to be 3.14 mW, 0.40, 9.98 mA and 0.78 V, respectively. These parameters are good enough to consider the solar module as a possible power source for the microprobe seismometer. Some recommendations were made to improve the usefulness of the amorphous silicon solar cell modules in space terrestrial applications, based on the results obtained from the intensive short term lab test effort.

Kim, Q.

Electron-phonon interaction on optical spectra of nanoelectronic devices

Information obtained on the solid-state lattice dynamics by electron-phonon interaction between lattice phonons and electrons could open up to learn more about lattice dynamics and to apply it in nanoelectronic devices including software reliability, nano-size capacitors, master clock sources, as well as non-contact temperature probes on nano-electronic and photonicdevices.

electron-phonon interactions lattice dynamics SrTi

Space qualification of photonic devices

Key optimal elements for space qualification plans of photonic devices are overviewed. Device parameters and qualifying procedures were discussed to assure the reliability of newly developed photonic devices needed for potential usage in space environments.

space

Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array

Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.

Kim, Q.

Infrared Emission Spectroscopy as a Reliability Tool

In this paper we report on a technique based on infrared emission spectroscopy which has been found to be useful for non-contact measurement of the temperature of a hot spot in the gate channel of a GaAs metal/semiconductor field effect transistor (MESFET). The technique was demonstrated on a powered and un-powered GaAs MESFET attaining a spatial resolution of 0.5 microns. A non-destructive submicron-size spot laser beam provided by an HeNe laser excites an extremely small local area of the gate channel of a GaAs MESFET under various operating conditions. Given the state of the experimental test system, we estimate a spatial resolution of about 0.1 microns and a spectral resolution of about 0. I Angstroms. This provides 15 - 100 times finer spatial resolution than can be obtained using the best passive IR systems available. The temperature resolution (less than 0.02 K/micron) of this technique is depend upon the spectrometer used, and that it can be improved further. The information obtained from this technique can be used to estimate device lifetimes for critical applications and for measurement of channel temperature of devices under actual operating conditions. Another potential use of the novel technique can be as a cost-effective prescreening tool for determining the "hot spot" channel temperature of devices under normal operating conditions which can further improve device design, yield enhancement, and reliable operation

Kim, Q.

Infrared Emission Spectroscopy as a Reliability Tool

In this paper we report on a technique based on infrared emission spectroscopy which has been found to be useful for non-contact measurement of the temperature of a hot spot in the gate channel of a GaAs metal/semiconductor field effect transistor (MESFET).

infrared

Excitation Spectroscopy as a Tool of Microelectronics Reliability

The main objective of this task was to experimentally determine the feasibility of using a non-contact IR emission spectroscopy technique to measure the hot spot channel temperature of sub-micron GaAs metal semiconductor field effect transistor gate during operation.

Excitation Spectroscopy Microspot Temperature Asse