NASA NTRS · 20210003288
Infrared Emission Spectroscopy as a Reliability Tool
Abstract
In this paper we report on a technique based on infrared emission spectroscopy which has been found to be useful for non-contact measurement of the temperature of a hot spot in the gate channel of a GaAs metal/semiconductor field effect transistor (MESFET).
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Kayali, S., Kim, Q.. 1999-11-14. Infrared Emission Spectroscopy as a Reliability Tool. https://ntrs.nasa.gov/citations/20210003288
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