Engineering topics
Publications and source records attributed to Kayali, S..
This paper presents a reliability evaluation methodology to obtain the statistical reliability information of memory chips for space applications when the test sample size needs to be kept small because of the high cost of the radiation hardness memories.
This paper provides a discussion of the subject and an approach to establish a reliability and qualification methodology to facilitate the utilization of state-of-the-art advanced microelectronic devices and structures in high reliability applications.
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This paper provides a description of common reliability and qualification practices and methods related to the utilization of Commercial-Off-The-Shelf (COTS) microelectronics in critical space applications.
This paper discusses radiation testing requirements for ionization and displacement damage in space systems.
This paper provides a description of the reliability and qualification issues related to the application of compound semiconductor devices in critical space systems.
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Fully-depleted silicon on insulator transitors were characterized at low temperatures for performance reliability.
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An overview of Microelectromechanical Systems (MEMS) reliability assurance and qualification activities at JPL is presented along with the a discussion of characterization of MEMS structures implemented on single crystal silicon, polycrystalline silicon, CMOS, and LIGA processes. Additionally, common failure modes and mechanisms affecting MEMS structures, including radiation effects, are discussed. Common reliability and qualification practices contained in the MEMS Reliability Assurance Guideline are also presented.
In this paper we report on a technique based on infrared emission spectroscopy which has been found to be useful for non-contact measurement of the temperature of a hot spot in the gate channel of a GaAs metal/semiconductor field effect transistor (MESFET). The technique was demonstrated on a powered and un-powered GaAs MESFET attaining a spatial resolution of 0.5 microns. A non-destructive submicron-size spot laser beam provided by an HeNe laser excites an extremely small local area of the gate channel of a GaAs MESFET under various operating conditions. Given the state of the experimental test system, we estimate a spatial resolution of about 0.1 microns and a spectral resolution of about 0. I Angstroms. This provides 15 - 100 times finer spatial resolution than can be obtained using the best passive IR systems available. The temperature resolution (less than 0.02 K/micron) of this technique is depend upon the spectrometer used, and that it can be improved further. The information obtained from this technique can be used to estimate device lifetimes for critical applications and for measurement of channel temperature of devices under actual operating conditions. Another potential use of the novel technique can be as a cost-effective prescreening tool for determining the "hot spot" channel temperature of devices under normal operating conditions which can further improve device design, yield enhancement, and reliable operation
General overview of optical communications was described. Efforts were concentrated for the reliability concerns of the optoelectronic and photonic parts needed for potential applications in space environments.
In this paper we report on a technique based on infrared emission spectroscopy which has been found to be useful for non-contact measurement of the temperature of a hot spot in the gate channel of a GaAs metal/semiconductor field effect transistor (MESFET).
The main objective of this task was to experimentally determine the feasibility of using a non-contact IR emission spectroscopy technique to measure the hot spot channel temperature of sub-micron GaAs metal semiconductor field effect transistor gate during operation.