Complementarity Probably Survives Challenge
In their Nature article of Sept. 3rd, S. Durr et al. report the results of an experiment involving the recombination of two quantum atomic beams.
Engineering topics
Publications and source records attributed to Cunningham, T..
In their Nature article of Sept. 3rd, S. Durr et al. report the results of an experiment involving the recombination of two quantum atomic beams.
Radiation hardened/tolerant Active Pixel Sensor CMOS imagers that can be adaptively windowed with low power, on-chip control, timing, digital output and provide data-channel efficient on-chip compression, high bandwidth optical communications links are being designed and investigated to reduce size, weight and cost for common optics/hybrid architectures.
The progress of Jet Propulsion Laboratory in developing gallium arsenide junction field-effect transistors (GaAs JFETs) for application in infrared readout electronics operating below 10 Kelvin is discussed.
A multiplexer and buffer based on GaAs JFET technology is presented. This multiplexer operates normally from room temperature down to 4 Kelvin and is suitable for the readout of Very Long Wavelength Infrared Detectors that must be cooled to below 10 Kelvin.
This paper describes a type of cosmic ray detector suitable for the construction of a small, low power space-based instrument to detect the energy and isotope of energetic nuclei, such as those produced by solar flares. The detector is similar to previous types of silicon PIN detectors where the fully depleted body of the wafer comprises intrinsic region of the PIN structure. The novel aspect of this detector is that the one surface is divided into a two-dimensional array of pixels, and that the collected holes are divided between a row and a column collector in each pixel, yielding both dimensions of position information from this side of the detector.
This paper presents the structure and fabrication of GaAs JFETSs and their performance at 4 K.
Gallium arsenide junction field-effect transistors (GaAS JFETS) are promising for deep cryogenic (<10k) readout electonics applications.
In the past year, there has been substantial impetus for NASA to consider missions that are of relatively low cost as a trade off for a higher new mission launch rate. To maintain low mission cost, these missions will be of short duration and will use smaller launch vehicles (e.g. Pegasus). Consequently, very low volume, very low mass instrument (a.k.a. miniature instrument) payloads will be required. Furthermore, it is anticipated that the number of instruments flown on a particular mission will also be highly constrained; consequently increased instrument capability will also be desired. In the case of infrared instruments, focal planes typically require cooling to ensure high performance of the detectors, especially in the case of spectrometers where high D* is necessary. In this paper, we discuss the InGaAs detector technology and its potential.
Potential relationships between eye behavior and pilot workload are discussed. A Honeywell Mark IIA oculometer was used to obtain the eye data in a fixed base transport aircraft simulation facility. The data were analyzed to determine those parameters of eye behavior which were related to changes in level of task difficulty of the simulated manual approach and landing on instruments. A number of trends and relationships between eye variables and pilot ratings were found. A preliminary equation was written based on the results of a stepwise linear regression. High variability in time spent on various instruments was related to differences in scanning strategy among pilots. A more detailed analysis of individual runs by individual pilots was performed to investigate the source of this variability more closely. Results indicated a high degree of intra-pilot variability in instrument scanning. No consistent workload related trends were found. Pupil diameter which had demonstrated a strong relationship to task difficulty was extensively re-exmained.