NASA NTRS · 20060038331
GaAs JFETS Intended for Deep Cryogenic VLWIR Readout Electronics
Abstract
This paper presents the structure and fabrication of GaAs JFETSs and their performance at 4 K.
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Cunningham, T., Fossum, E.. 1994-06-29. GaAs JFETS Intended for Deep Cryogenic VLWIR Readout Electronics. https://ntrs.nasa.gov/citations/20060038331
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