Engineering topics
Publications and source records attributed to Das, N. C..
The n-channel Germanium junction field effect transistor (Ge-JFET) was designed and fabricated for cryogenic applications. The Ge-JFET exhibits superior noise performance at liquid nitrogen temperature (77 K). From the device current voltage characteristics of n-channel JFETs, it is seen that transconductance increases monotonically with the lowering of temperature to 4.2 K (liquid helium temperature).
The corrugated quantum-well infrared photodetector (C-QWIP) uses total internal reflection to couple normal incident light into the optically active quantum wells. The coupling efficiency has been shown to be relatively independent of the pixel size and wavelength thus making the C-QWIP a candidate for detectors over the entire infrared spectrum. The broadband coupling efficiency of the C-QWIP makes it an ideal candidate for multiwavelength detectors. We fabricated and tested C-QWIP focal plane arrays (FPAs) with cutoff wavelengths of 11.2 and 16.2 micrometers. Each FPA has 256 x 256 pixels that are bump-bonded to a direct injection readout circuit. Both FPAs provided infrared imagery with good aesthetic attributes. For the 11.2-micrometers FPA, background-limited performance (BLIP) was observed at 60 K with f/3 optics. For the 16.2-micrometers FPA, BLIP was observed at 38 K. Besides the reduction of dark current in C-QWIP structures, the measured internal quantum efficiency (eta) remains to be high. The values for responsivity and quantum efficiency obtained from the FPA results agree well with those measured for single devices.
Quantum well infrared photodetectors (QWIPs) have many advantages in infrared detection, mainly due to the mature Ill-V material technology. The employment of the corrugation structure further advances the technology by providing a simple, yet efficient light-coupling scheme. A C-QWIP enjoys the same flexibility as a detector with intrinsic normal incident absorption. In this paper, we will discuss the utilities of C-QWIPs in different applications, including two-color detection and polarization-sensitive detection. Besides practical applications, C-QWIPs are also useful in detector characterization. They can be used for measuring the absorption coefficient of light propagating parallel to the layers under bias and providing information on the energy resolved photoconductive gain. These two quantities have never been measured before. Based on the corrugation design, we have made several modifications that further improve the detector sensitivity without increasing its complexity. Other than the C-QWIP structure, we also continue searching for other sensitive detector architectures. In a quantum grid infrared photodetector, 3-dimensional electron confinement can be achieved, with which the detector is able to absorb light in all directions. At the same time, the photoconductive gain can also be improved. We further improve the design using a blazed structure. All the experimental results are supported by a rigorous electromagnetic modal transmission-line theory developed especially for these types of structures. Preliminary thermal imaging using C-QWIP FPAs validates the advantages of the present approach.
We have designed and fabricated polysilicon thin film infrared (IR) sources by micromachining technology. These sources are made with a lightly doped middle region for light emission and heavy doping of the supporting legs. The sources are fabricated on a 10 mm thick, low temperature process parameters in the fabrication of these silicon dioxide layer. Different doping levels were used to achieve various source resistances. From the power requirement to reach the required light emission versus source resistance curve it is seen that there exists a resistance value which minimizes the necessary input power.
An attempt has been made to understand the mechanisms of radiation induced degradation by using different types of hot carrier (HC) stressing experiments. The degradation of re-oxidized nitrided oxide gate dielectric due to irradiation and hot carriers are reported. The effect of electron and hole traps of the virgin device on radiation induced threshold voltage shift is discussed.