NASA NTRS · 20000031730
Germanium JFET for Cryogenic Readout Electronics
Abstract
The n-channel Germanium junction field effect transistor (Ge-JFET) was designed and fabricated for cryogenic applications. The Ge-JFET exhibits superior noise performance at liquid nitrogen temperature (77 K). From the device current voltage characteristics of n-channel JFETs, it is seen that transconductance increases monotonically with the lowering of temperature to 4.2 K (liquid helium temperature).
Keep this discovery
Explore connections, maps & timelines
Das, N. C., Monroy, C., Jhabvala, M., Shu, P.. 1999-11-23. Germanium JFET for Cryogenic Readout Electronics. https://ntrs.nasa.gov/citations/20000031730
Cite the original work for its findings. Save a collection to share your selection of sources.