Graphene Heterostructure Field Effect Transistors Encapsulated by Isotopically Pure Hexagonal Boron Nitride.
Abstract not provided.
Behera, Aroop↗
Engineering topics
Das, Suprem
Publications and source records attributed to Das, Suprem.
The Influence of Atomic-Scale Defects on Thermal Transport in MoS2.
Abstract not provided.
Chen, Pingping↗
Charge Inhomogeneity Mediated Low-Frequency Noise in Encapsulated Graphene Field Effect Transistors.
Abstract not provided.
Behera, Aroop↗