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DOE OSTI · 2003667

Graphene Heterostructure Field Effect Transistors Encapsulated by Isotopically Pure Hexagonal Boron Nitride.

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BibTeXRIS

Behera, Aroop, Ali, Ayaz, Harris, Charles, Pete, Douglas, Janzen, Eli, Koybasi, Ozhan, Edgar, James, Belle, Branson, Das, Suprem. 2022-06-01. Graphene Heterostructure Field Effect Transistors Encapsulated by Isotopically Pure Hexagonal Boron Nitride.. https://doi.org/10.2172/2003667

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