Graphene Heterostructure Field Effect Transistors Encapsulated by Isotopically Pure Hexagonal Boron Nitride.
Abstract not provided.
Behera, Aroop↗
Engineering topics
Koybasi, Ozhan
Publications and source records attributed to Koybasi, Ozhan.
Charge Inhomogeneity Mediated Low-Frequency Noise in Encapsulated Graphene Field Effect Transistors.
Abstract not provided.
Behera, Aroop↗