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Edmonds, Larry

Publications and source records attributed to Edmonds, Larry.

8 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2017

Observation of Single-Event Burnout During Inductive Switching

1A power MOSFET demonstrated destructive Single-Event Effect (SEE) during ion irradiation in a switching circuit. Further investigation showed that the inductive load causing a spike in the drain-to-source voltage (VDS) that exceeded the manufacturer’s rating for several nanoseconds was enough to allow SEB. These results indicate that SEB may occur in a very short window and flyback is critical for disciplined power supply design.

Menke, Rob↗
NASA NTRS2008

Current Leakage Evolution in Partially Gate Raptured Power MOSFETs

It has been observed that power MOSFETs can experience an SEGR and continue to function with altered parameters. We propose that there are three different types of SEGR modes; the micro-break, the thermal runaway, and the avalanche breakdown. Data that demonstrates these stages of device failure are presented as well as a proposed model for the micro-break. Brief discussions of the other modes, based on analysis combined with our interpretations of the older literature, are also given.

metal oxide semiconductor field-effect transistors↗
NASA NTRS2004

Measurement of Device Parameters Using Image Recovery Techniques in Large-Scale IC Devices

Devices that respond to radiation on a cell level will produce histograms showing the relative frequency of cell damage as a function of damage. The measured distribution is the convolution of distributions from radiation responses, measurement noise, and manufacturing parameters. A method of extracting device characteristics and parameters from measured distributions via mathematical and image subtraction techniques is described.

radiation↗
NASA NTRS1995

A theoretical analysis of steady-state photocurrents in simple silicon diodes.

A theoretical analysis solves for the steady-state photocurrents produced by a given photogeneration rate function with negligible recombination in simple silicon diodes, consisting of a uniformly doped quasi-neutral region (called "substrate" below) between a p-n junction depletion region (DR) and an ohmic contact (electrode). Special attention is given to conditions that produce "funneling" (a term used by the single-event-effects community) under steady-state conditions. Funneling occurs when carriers are generated so fast that the DR becomes flooded and partially or completely collapses. Some or nearly all of the applied voltage plus built-in potential normally across the DR is now across the substrate. This substrate voltage drop affects substrate currents. The steady-state problem can provide some qualitative insights into the more difficult transient problem. Chapter 6 discusses some similarities between the steady-state and transient problems...

Edmonds, Larry↗
NASA NTRS1987

Boundary value problem for the solution of magnetic cutoff rigidities and some special applications

Since a planet's magnetic field can sometimes provide a spacecraft with some protection against cosmic ray and solar flare particles, it is important to be able to quantify this protection. This is done by calculating cutoff rigidities. An alternate to the conventional method (particle trajectory tracing) is introduced, which is to treat the problem as a boundary value problem. In this approach trajectory tracing is only needed to supply boundary conditions. In some special cases, trajectory tracing is not needed at all because the problem can be solved analytically. A differential equation governing cutoff rigidities is derived for static magnetic fields. The presense of solid objects, which can block a trajectory and other force fields are not included. A few qualititative comments, on existence and uniqueness of solutions, are made which may be useful when deciding how the boundary conditions should be set up. Also included are topics on axially symmetric fields.

Edmonds, Larry↗