NASA NTRS · 20090035569
Current Leakage Evolution in Partially Gate Raptured Power MOSFETs
Abstract
It has been observed that power MOSFETs can experience an SEGR and continue to function with altered parameters. We propose that there are three different types of SEGR modes; the micro-break, the thermal runaway, and the avalanche breakdown. Data that demonstrates these stages of device failure are presented as well as a proposed model for the micro-break. Brief discussions of the other modes, based on analysis combined with our interpretations of the older literature, are also given.
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Scheick, Leif, Edmonds, Larry, Selva, Luis, Chen, Yuan. 2008-08-01. Current Leakage Evolution in Partially Gate Raptured Power MOSFETs. https://ntrs.nasa.gov/citations/20090035569
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