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Scheick, Leif

Publications and source records attributed to Scheick, Leif.

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2019

Body of Knowledge (BOK): Gallium Nitride (GaN) Power Electronics for Space Applications

Gallium nitride (GaN), a wide bandgap (WBG) semiconductor, has emerged as a very promising material for electronic components due to the tremendous advantages it offers compared to silicon (Si), such as power capability, extreme temperature tolerance, and high frequency operation. This presentation summarizes a body of knowledge (BOK) document in reference to the development and current status of GaN technology obtained via literature and industry surveys. It provides a listing of the major manufacturers and their capabilities, as well as government, industry, and academic parties interested in the technology. The presentation also discusses GaN's applications in the area of power electronics, in particular those geared for space missions. Finally, issues relevant to the reliability of GaN-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified.

Boomer, Kristen↗
NASA NTRS2017

Observation of Single-Event Burnout During Inductive Switching

1A power MOSFET demonstrated destructive Single-Event Effect (SEE) during ion irradiation in a switching circuit. Further investigation showed that the inductive load causing a spike in the drain-to-source voltage (VDS) that exceeded the manufacturer’s rating for several nanoseconds was enough to allow SEB. These results indicate that SEB may occur in a very short window and flyback is critical for disciplined power supply design.

Menke, Rob↗
NASA NTRS2014

Thermal Cycling and High Temperature Reverse Bias Testing of Control and Irradiated Gallium Nitride Power Transistors

The power systems for use in NASA space missions must work reliably under harsh conditions including radiation, thermal cycling, and exposure to extreme temperatures. Gallium nitride semiconductors show great promise, but information pertaining to their performance is scarce. Gallium nitride N-channel enhancement-mode field effect transistors made by EPC Corporation in a 2nd generation of manufacturing were exposed to radiation followed by long-term thermal cycling and testing under high temperature reverse bias conditions in order to address their reliability for use in space missions. Result of the experimental work are presented and discussed.

thermal cycling tests↗
NASA NTRS2014

Investigation of the Semicoa 2N7616 and 2N7425 and the Microsemi 2N7480 for Single-Event Gate Rupture and Single-Event Burnout

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. The 2N7616 and the 2N7425 from Semicoa and the 2N7480 from International Rectifier were tested to NASA test condition standards and requirements. The 2N7480 performed well and the data agree with the manufacture's data. The 2N7616 and 2N7425 were entry parts from Semicoa using a new device architecture. Unfortunately, the device performed poorly and Semicoa is withdrawing power MOSFETs from it line due to these data. Vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) are the most commonly used power transistor. MOSFETs are typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single-event gate rupture (SEGR) or single-event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. See [1] through [5] for more information. The objective of this effort was to investigate the SEGR and SEB responses of two power MOSFETs recently produced. These tests will serve as a limited verification of these parts. It is acknowledged that further testing on the respective parts may be needed for some mission profiles.

Scheick, Leif↗
NASA NTRS2014

Single-Event Effect Report for EPC Series eGaN FETs: The Effect of Load Conditions on Destructive SEE

Recent testing of Enhanced Power Conversion (EPC) eGaN FET devices design for power use has shown that the devices are susceptible to Single-Event Effects (SEE) that degrade or destroy the device. The exact mechanism of the SEE is not known. The testing so far has been in the static condition, in the fully off condition, and with minimal load conditions. These conditions may not be worst case. This report presents the results of a study that tests some of the load conditions for SEE. The EPC2012 and EPC1012 were chosen for the test. The tests were performed the TAMU radiation effects facility in May and June of 2013.

Scheick, Leif↗
NASA NTRS2014

Single-Event Effect Report for EPC Series eGaN FETs: Comparison of EPC1000 and EPC2000 Series Devices for Destructive SEE

Recent testing of the EPC1000 series eGaN FETs has shown sensitivity to Single Event Effects (SEE) that are destructive. These effects are most likely the failure of the very thin gate structure in HEMT architecture. EPC has recently changed the doping of the substrate to improve the performance and the SEE response. This testing compares the SEE response of both devices.

Scheick, Leif↗
NASA NTRS2014

Single-event Effect Report for EPC Series eGaN FETs: Proton Testing for SEE and TNID Effects

Previous testing of the Enhanced Power Conversion (EPC) eGaN FETs showed sensitivity to destructive single-event effects (SEE) effects to heavy ions. The presence of tungsten plugs in the gate area raises concerns that the device may be vulnerable to SEE from protons. Irradiation of biased and unbiased devices with heavy ion has results in some damage suspected of being due to total non-ionizing dose (TNID). Proton irradiation is a better radiation type to study this effect. This study presents the results of testing device with protons for SEE and TNID. No SEE in the EPC2012 device, the most sensitive device to SEE, were seen with 53 MeV protons at several angles. The devices continued to function after 1.5 Mrad (Si) of proton dose with only a slight shift in parameters. These results suggest that gross TNID will not be a factor in using these devices nor suffer from SEE due to protons. However, the device should be tested at with 500 MeV protons to guarantee to immunity proton SEE.

Scheick, Leif↗
NASA NTRS2014

Single-Event Effect Report for EPC Series eGaN FETs: EPC2015, EPC2014, EPC2012

Heavy ion testing of newly available eGaN FETs from EPC were tested in May of 2012 at TAM. The EPC2001, EPC2012, and EPC2014 were tested for general single-event effect response from gold and xenon ions. Overall, the devices showed radiation degradation commensurate with breakdown in isolation oxides, and similar testing by EPC and Microsemi agrees with these data.

Scheick, Leif↗
NASA NTRS2013

Effects of Thermal Cycling on Control and Irradiated EPC 2nd Generation GaN FETs

The power systems for use in NASA space missions must work reliably under harsh conditions including radiation, thermal cycling, and exposure to extreme temperatures. Gallium nitride semiconductors show great promise, but information pertaining to their performance is scarce. Gallium nitride N-channel enhancement-mode field effect transistors made by EPC Corporation in a 2nd generation of manufacturing were exposed to radiation followed by long-term thermal cycling in order to address their reliability for use in space missions. Results of the experimental work are presented and discussed.

field effect transistor↗
NASA NTRS2013

Impact of Total Ionizing Dose Radiation Testing and Long-Term Thermal Cycling on the Operation of CMF20120D Silicon Carbide Power MOSFET

Power systems designed for use in NASA space missions are required to work reliably under harsh conditions including radiation, thermal cycling, and extreme temperature exposures. Silicon carbide devices show great promise for use in future power electronics systems, but information pertaining to performance of the devices in the space environment is very scarce. A silicon carbide N-channel enhancement-mode power MOSFET called the CMF20120 is of interest for use in space environments. Samples of the device were exposed to radiation followed by long-term thermal cycling to address their reliability for use in space applications. The results of the experimental work are presentd and discussed.

thermal cycling tests↗
NASA NTRS2013

Single-Event Effect Report for EPC Series eGaN FETs: EPC1001, EPC1010, EPC1014, EPC1012

Heavy ion testing of newly available GaN FETs from EPC were tested in March of 2012 at TAM. The EPC1010, EPC1001, EPC1012, and EPC1014 were tested for general radiation response from gold and xenon ions. Overall the devices showed radiation degradation commensurate with breakdown in isolation oxides, and similar testing by EPC and Microsemi agrees with these data. These devices were the first generation production of the device called Gen1. Gen2 parts are scheduled for later in the third quarter of FY2012

Scheick, Leif↗
NASA NTRS2013

Single-Event Effect Report for EPC Series eGaN FETs: EPC1001, EPC1010, EPC1014, EPC1012

Heavy ion testing of newly available GaN FETs from EPC were tested in March of 2012 at TAM. The EPC1010, EPC1001, EPC1012, and EPC1014 were tested for general radiation response from gold and xenon ions. Overall the devices showed radiation degradation commensurate with breakdown in isolation oxides, and similar testing by EPC and Microsemi agrees with these data. These devices were the first generation production of the device called Gen1. Gen2 parts are scheduled for later in the third quarter of FY2012

Scheick, Leif↗
NASA NTRS2012

Effects of Radiation and Long-Term Thermal Cycling on EPC 1001 Gallium Nitride Transistors

Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These include radiation, extreme temperatures, and thermal cycling, to name a few. Data obtained on long-term thermal cycling of new un-irradiated and irradiated samples of EPC1001 gallium nitride enhancement-mode transistors are presented. This work was done by a collaborative effort including GRC, GSFC, and support the NASA www.nasa.gov 1 JPL in of Electronic Parts and Packaging (NEPP) Program

Patterson, Richard L.↗