NASA NTRS · 20140011400
Single-Event Effect Report for EPC Series eGaN FETs: EPC2015, EPC2014, EPC2012
Abstract
Heavy ion testing of newly available eGaN FETs from EPC were tested in May of 2012 at TAM. The EPC2001, EPC2012, and EPC2014 were tested for general single-event effect response from gold and xenon ions. Overall, the devices showed radiation degradation commensurate with breakdown in isolation oxides, and similar testing by EPC and Microsemi agrees with these data.
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Scheick, Leif. 2014-01-01. Single-Event Effect Report for EPC Series eGaN FETs: EPC2015, EPC2014, EPC2012. https://ntrs.nasa.gov/citations/20140011400
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