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Scheick, Leif

Publications and source records attributed to Scheick, Leif.

27 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2011

Investigation of the Semicoa SCF9550 and the International Rectifier IRHM57260SE for Single-Event Gate Rapture and Single-Event Burnout : NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. TheSCF9550 from Semicoa and the IRHM57260SE from International Rectifier were tested to NASA test condition/standards and requirements.The IRHM57260SE performed much better when compared to previous testing. These initial results confirm that parts from the Temecula line are marginally comparable to the El Segundo line. The SCF9550 from Semicoa was also tested and represents the initial parts offering from this vendor. Both parts experienced single-event gate rupture (SEGR) and single-event burnout (SEB). All of the SEGR was from gate to drain.

Single Event Gate Rupture↗
NASA NTRS2010

Re-Verification of the IRHN57133SE and IRHN57250SE for Single Event Gate Rupture and Single Event Burnout

The vertical metal oxide semiconductor field-effect transistor (MOSFET) is a widely used power transistor onboard a spacecraft. The MOSFET is typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single event gate rupture (SEGR) or single event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. These radiation hardened devices are not immune to SEGR or SEB but, rather, can exhibit them at a much more damaging ion than their non-radiation hardened counterparts. See [1] through [5] for more information.This effort was to investigate the SEGR and SEB responses of two power MOSFETs from IR(the IRHN57133SE and the IRHN57250SE) that have recently been produced on a new fabrication line. These tests will serve as a limited verification of these parts, but it is acknowledged that further testing on the respective parts may be needed for some mission profiles.

Single Event Gate Rupture (SEGR)↗
NASA NTRS2008

Current Leakage Evolution in Partially Gate Raptured Power MOSFETs

It has been observed that power MOSFETs can experience an SEGR and continue to function with altered parameters. We propose that there are three different types of SEGR modes; the micro-break, the thermal runaway, and the avalanche breakdown. Data that demonstrates these stages of device failure are presented as well as a proposed model for the micro-break. Brief discussions of the other modes, based on analysis combined with our interpretations of the older literature, are also given.

metal oxide semiconductor field-effect transistors↗
NASA NTRS2008

Testing guideline for single event gate rupture (SEGR) of power MOSFETs

The purpose of this document is two-fold. First, the document lists and discusses many of the issues important to understand when testing power MOSFETs. Second, the recommended approach for using radiation test data to define the device application requirements is presented. These include SEE rate calculation, data analysis, and derating guidelines. A significant amount of work has been done on the basic effects of SEB and SEGR. References are supplied where seminal work has been done on the topic at hand. The reader is urged to review the references if the testing issues or mission application at hand are complex.

Scheick, Leif↗
NASA NTRS2006

Effects of Radiation on Commercial Power Devices

The effects of radiation on various commercial power devices are presented. The devices have proved to be very fragile to single event effects, with some of the devices actually succumbing to catastrophic SEE with protons.

power semiconductor devices↗
NASA NTRS2004

Measurement of Device Parameters Using Image Recovery Techniques in Large-Scale IC Devices

Devices that respond to radiation on a cell level will produce histograms showing the relative frequency of cell damage as a function of damage. The measured distribution is the convolution of distributions from radiation responses, measurement noise, and manufacturing parameters. A method of extracting device characteristics and parameters from measured distributions via mathematical and image subtraction techniques is described.

radiation↗
NASA NTRS2004

Displacement Damage Induced Catastrophic Second Breakdown in Silicon Carbide Schottky Power Diodes

A novel catastrophic breakdown mode in reversed biased Silicon carbide diodes has been seen for low LET particles. These particles are too low in LET to induce SEB, however SEB was seen from particles of higher LET. The low LET mechanism correlates with second breakdown in diodes due to increase leakage and assisted charge injection from incident particles. Percolation theory was used to predict some basic responses of the devices, but the inherent reliability issue with silicon carbide have proven challenging.

breakdown↗