Engineering topics
Publications and source records attributed to Edward P Wilcox.
Single-event effects (SEE) and total ionizing dose (TID) data are presented for several automotive- and industrial-grade solid-state drives, and the effects of different active test configurations on hardness assurance are explored.
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Single-event effects testing (heavy-ion and proton) is presented for 96- and 176-layer commercially-available 3D NAND flash memory, with emphasis on SEFI detection and recovery.
Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include FPGAs, optoelectronics, digital, analog, and bipolar devices.
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Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, and bipolar devices.
Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, and bipolar devices.
Single-event upsets are observed in a 72-layer 3D NAND flash memory operated in single-level cell mode after low-energy proton (500 keV-1.2 MeV) and heavy ion irradiation. The layer-by-layer error count is analyzed to visualize the stopping of low energy protons within the memory stack, and Monte Carlo simulations are correlated with the experimental data. Direct ionization by low-energy protons is identified by three-dimensional data analysis and the energy dependence of device sensitive cross-section. Heavy ion data is also presented for comparison.
Analog single-event transient results are analyzed for two different applications within one system architecture. Application-specific analyses are presented on the MAX4595 commercial device using single-event effects criticality and goal structuring notation.
Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include FETs, flash memory, FPGAs, optoelectronics, digital, analog, and bipolar devices.
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The purpose of this testing is to characterize the Single-Event Effect (SEE) response of the Micron MT29F1T08CMHBBJ4 3D NAND Flash memory. The MT29F1T08CMHBBJ4 is a 1Tb NAND Flash memory, consisting of a four-die stack of 256Gb MLC dice packaged in a 132-ball VBGA package. All data presented is the result of testing only the top die (256Gb) of the package. Testing was performed at two heavy-ion cyclotron facilities with an identical test setup, over the course of four test trips from 2017-2019.
Total ionizing dose and displacement damage testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
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Automotive and industrial grade SSDs were tested for TID and SEE response at the assembly level to investigate radiation tolerance trends and explore radiation hardness assurance best practices in commercial memory devices. SSDs were installed in passive NVMe extenders to place only the drive in the beam line. A digital I/O module connected to the test computer provided inhibit signals to block both facility beam delivery and power while attempting recovery from any device failure conditions (e.g., failed write, failed read, or unresponsive device).