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Eichenfield, Matt

Publications and source records attributed to Eichenfield, Matt.

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Focusing transformers/filters in isotropic/anisotropic piezoelectrics

A focusing interdigital transducer (IDT) and corresponding single- and dual-port piezoelectric devices are disclosed. The focusing interdigital transducer, which generates Lamé acoustic waves, permits operation at significantly higher frequencies than those possible with traditional IDTs. The focusing IDT employs multiple arced fingers formed both above and below the piezoelectric layer to improve coupling efficiency by coupling through both the e31 and e33 piezoelectric coefficients to the piezoelectric layer. By optimizing both anchor design and location, acoustic wave losses are minimized, thereby improving the device's quality factor Q. Through proper bus design and selection of the number of IDT fingers, a device's impedance can be tuned for a given application. The focusing IDTs may be used in single-port filter devices and dual-port transformer devices. The single- and dual-port devices may operate at a single frequency, at two frequencies, or over a band of frequencies.

Siddiqui, Aleem↗
DOE OSTI2020

Hybrid semiconductor-piezoacoustic radiofrequency device

An amplifying radiofrequency device includes a piezoelectric film and a semiconductor amplifier layer. The piezoelectric film is conformed as an acoustic waveguide. The piezoelectric film has a principal acoustic propagation direction parallel to the principal conduction direction of the amplifier layer. Interdigitated transducers are positioned on the piezoelectric film to respectively launch an acoustic wave in response to an input RF signal, and transduce the acoustic wave back to an output RF signal. There is a distance of less than the acoustic wavelength between the semiconductor amplifier layer and the piezoelectric film. The piezoelectric film has a thickness of less than the acoustic wavelength. According to a method for making such a device, a stack of III-V layers is epitaxially grown on a III-V substrate, wherein the stack comprises a first etch stop layer, a second etch stop layer, an amplifier layer, and a contact layer. The stack is bonded to a lithium niobate film. The III-V substrate is removed by etching down to the first etch stop layer. Deposition windows are opened by etching from the first etch stop layer down to the contact layer. Metal contact electrodes are deposited in the deposition windows.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Comparison of amplification via the acousto-electric effect of Rayleigh and Leaky-SAW modes in a monolithic surface InP:InGaAs/lithium niobate heterostructure

This work demonstrates a monolithic surface acoustic wave amplifier fabricated by state-of-the-art heterogenous integration of a III-V InGaAs-based epitaxial material stack and LiNbO 3 . We compare amplification of Raleigh-SAW and leaky-SAW modes on a on Y-cut, X-propagating delay line amplifier. Due to the superior properties of the materials employed, we observe a net terminal gain of 3dB for an LSAW overtone mode This platform enables further advances in active and non-reciprocal piezoelectric acoustic devices.

42 ENGINEERING↗
DOE OSTI2019

Evanescently coupled piezoelectric acoustic devices

An electro-acoustic device includes a plurality of suspended, piezoelectric, acoustically waveguiding membranes supported in a common plane. An input transducer coupled to one of the waveguiding membranes converts input electrical signals to traveling-wave acoustic signals. An output transducer coupled to one of the waveguiding membranes converts acoustic signals to electrical signals. At least two of the waveguiding membrane have parallel straight sections that are longer than a guided acoustic wavelength and that are mutually separated by an air gap having a width less than the guided acoustic wavelength.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Active and Nonreciprocal Radio-Frequency Acoustic Microsystems

Radio frequency (RF) devices are becoming more multi-band, increasing the number of filters and other front-end components while simultaneously pushing towards reduced cost, size, weight, and power (CSWaP). One approach to reducing CSWaP is to augment the achievable functionalities of electromechanical/acoustic filtering chips to include "active" and nonlinear functionalities, such as gain and mixing. The acoustoelectric (AE) effect could enable such active acoustic wave devices. We have examined the AE effect with a leaky surface acoustic wave (LSAW) in a monolithic structure of epitaxial indium gallium arsenide (In GaAs) on lithium niobate (LiNb0 3 ). This lead to experimentally demonstrated state-of-the-art SAW amplifier performance in terms of gain per acoustic wavelength, reduced power consumption, and increased power efficiency. We quantitatively compare the amplifier performance to previous notable works and discuss the outlook of active acoustic wave components using this material platform. Ultimately, this could lead to smaller, higher-performance RF signal processors for communications applications.

42 ENGINEERING↗
DOE OSTI2018

Trimming method for microresonators and microresonators made thereby

A micromechanical resonator is disclosed. The resonator includes a resonant micromechanical element. A film of annealable material deposited on a facial surface of the element. In one instance, the resonance of the element can be adjusting by using a feedback loop to control annealing of the deposited film.

42 ENGINEERING↗