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Evans, P. G.

Publications and source records attributed to Evans, P. G..

Reply to “Comment on ‘Ultrafast terahertz-field-driven ionic response in ferroelectric BaTiO 3 ' ” [Response to Comment by S. Durbin on “Ultrafast terahertz-field-driven ionic response in ferroelectric BaTiO 3 ”]

In this reply to S. Durbin's comment on our original paper “Ultrafast terahertz-field-driven ionic response in ferroelectric BaTiO 3 ,” we concur that his final equations 8 and 9 more accurately describe the change in diffracted intensity as a function of Ti displacement. Here, we also provide an alternative derivation based on an ensemble average over unit cells. The conclusions of the paper are unaffected by this correction.

74 ATOMIC AND MOLECULAR PHYSICS↗

Dynamical scattering in coherent hard x-ray nanobeam Bragg diffraction

Unique intensity features arising from dynamical diffraction arise in coherent x-ray nanobeam diffraction patterns of crystals having thicknesses larger than the x-ray extinction depth or exhibiting combinations of nanoscale and mesoscale features. We demonstrate that dynamical scattering effects can be accurately predicted using an optical model combined with the Darwin theory of dynamical x-ray diffraction. The model includes the highly divergent coherent x-ray nanobeams produced by Fresnel zone plate focusing optics and accounts for primary extinction, multiple scattering, and absorption. Furthermore, the simulation accurately reproduces the dynamical scattering features of experimental diffraction patterns acquired from a GaAs/AlGaAs epitaxial heterostructure on a GaAs (001) substrate.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Stressor-layer-induced elastic strain sharing in SrTiO 3 complex oxide sheets

A precisely selected elastic strain can be introduced in submicron-thick single-crystal SrTiO 3 sheets using a silicon nitride stressor layer. A conformal stressor layer deposited using plasma-enhanced chemical vapor deposition produces an elastic strain in the sheet consistent with the magnitude of the nitride residual stress. Synchrotron x-ray nanodiffraction reveals that the strain introduced in the SrTiO 3 sheets is on the order of 10 -4 , matching the predictions of an elastic model. Using this approach to elastic strain sharing in complex oxides allows the strain to be selected within a wide and continuous range of values, an effect not achievable in heteroepitaxy on rigid substrates.

36 MATERIALS SCIENCE↗

Quantum Information Science: Factual Document for the Office of Basic Energy Sciences at the Department of Energy

For decades, scientists have known that devices to store and manipulate information in quantum physical systems such as atoms or photons would provide radical new capabilities in computing, communication, and sensing. These novel capabilities include speed-ups in scientific calculations of quantum materials and chemical systems, enhanced resolution in imaging and detection systems, and greater security for encrypted communication systems. Building these devices requires a detailed understanding of how quantum materials behave, accurate knowledge of how to integrate them, and high-fidelity control of the physical qubits that store information. These goals are fundamental research challenges for materials synthesis, fabrication, and characterization; and the science of quantum information intersects heavily with ongoing basic research into materials science, chemistry, and quantum physics. These systems represent state-of-the-art approaches to building and controlling the basic physical elements of quantum information. Research into quantum sensing and quantum communication strongly leverages these advances for next-generation technologies, e.g., measurements beyond the Heisenberg limit, while applications of quantum computing (QC) as a platform for understanding future quantum material systems highlight its potential for advanced scientific discovery. This factual status document for Quantum Information Science has been developed for the Department of Energy Office of Science, Basic Energy Sciences (BES). The following are several seminal or key references for interested readers; the reference section gives a more exhaustive, but still not complete, list of important papers in this area.

36 MATERIALS SCIENCE↗

Ultrafast terahertz-field-driven ionic response in ferroelectric BaTiO 3

The dynamical processes associated with electric field manipulation of the polarization in a ferroelectric remain largely unknown but fundamentally determine the speed and functionality of ferroelectric materials and devices. Here in this paper we apply subpicosecond duration, single-cycle terahertz pulses as an ultrafast electric field bias to prototypical BaTiO 3 ferroelectric thin films with the atomic-scale response probed by femtosecond x-ray-scattering techniques. We show that electric fields applied perpendicular to the ferroelectric polarization drive large-amplitude displacements of the titanium atoms along the ferroelectric polarization axis, comparable to that of the built-in displacements associated with the intrinsic polarization and incoherent across unit cells. This effect is associated with a dynamic rotation of the ferroelectric polarization switching on and then off on picosecond time scales. These transient polarization modulations are followed by long-lived vibrational heating effects driven by resonant excitation of the ferroelectric soft mode, as reflected in changes in the c-axis tetragonality. The ultrafast structural characterization described here enables a direct comparison with first-principles-based molecular-dynamics simulations, with good agreement obtained.

36 MATERIALS SCIENCE↗

Structural sensitivity of x-ray Bragg projection ptychography to domain patterns in epitaxial thin films

Bragg projection ptychography (BPP) is a coherent diffraction imaging technique capable of mapping the spatial distribution of the Bragg structure factor in nanostructured thin films. Here, we show that, because these images are projections, the structural sensitivity of the resulting images depends on the film thickness and the aspect ratio and orientation of the features of interest and that image interpretation depends on these factors. Lastly, we model changes in contrast in the BPP reconstructions of simulated PbTiO 3 ferroelectric thin films with meandering 180° stripe domains as a function of film thickness, discuss their origin, and comment on the implication of these factors on the design of BPP experiments of general nanostructured films.

36 MATERIALS SCIENCE↗

Combining experiment and optical simulation in coherent X-ray nanobeam characterization of Si/SiGe semiconductor heterostructures

The highly coherent and tightly focused x-ray beams produced by hard x-ray light sources enable the nanoscale characterization of the structure of electronic materials but are accompanied by significant challenges in the interpretation of diffraction and scattering patterns. X-ray nanobeams exhibit optical coherence combined with a large angular divergence introduced by the x-ray focusing optics. The scattering of nanofocused x-ray beams from intricate semiconductor heterostructures produces a complex distribution of scattered intensity. We report here an extension of coherent x-ray optical simulations of convergent x-ray beam diffraction patterns to arbitrary x-ray incident angles to allow the nanobeam diffraction patterns of complex heterostructures to be simulated faithfully. These methods are used to extract the misorientation of lattice planes and the strain of individual layers from synchrotron x-ray nanobeam diffraction patterns of Si/SiGe heterostructures relevant to applications in quantum electronic devices. The systematic interpretation of nanobeam diffraction patterns from semiconductor heterostructures presents a new opportunity in characterizing and ultimately designing electronic materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Fabrication of flat SiGe heterostructure nanomembrane windows via strain-relief patterning

The lattice mismatch between SiGe and Si in heteroepitaxial Si/SiGe/Si trilayers leads to buckling when confined nanomembrane windows formed from these heterostructures are released from silicon-on-insulator substrates. We demonstrate that large areas in which the curvature and curvature-induced strain are reduced by an order of magnitude can be produced by patterning the windows to concentrate buckling in narrow arms with low flexural rigidity supporting a flat central region. Synchrotron x-ray thermal diffuse scattering shows that the improved flatness of patterned windows permits fundamental studies with fidelity similar to what can be achieved with flat single-component Si nanomembranes.

buckling↗

Nanomembrane-based materials for Group IV semiconductor quantum electronics

Strained-silicon/relaxed-silicon-germanium alloy (strained-Si/SiGe) heterostructures are the foundation of Group IV-element quantum electronics and quantum computation, but current materials quality limits the reliability and thus the achievable performance of devices. In comparison to conventional approaches, single-crystal SiGe nanomembranes are a promising alternative as substrates for the epitaxial growth of these heterostructures. Because the nanomembrane is truly a single crystal, in contrast to the conventional SiGe substrate made by compositionally grading SiGe grown on bulk Si, significant improvements in quantum electronic-device reliability may be expected with nanomembrane substrates. We compare lateral strain inhomogeneities and the local mosaic structure (crystalline tilt) in strained-Si/SiGe heterostructures that we grow on SiGe nanomembranes and on compositionally graded SiGe substrates, with micro-Raman mapping and nanodiffraction, respectively. Significant structural improvements are found using SiGe nanomembranes.

NANOSCALE MATERIALS↗

Optical design of the short pulse x-ray imaging and microscopy time-angle correlated diffraction beamline at the Advanced Photon Source

The short pulse x-ray imaging and microscopy beamline is one of the two x-ray beamlines that will take full advantage of the short pulse x-ray source in the Advanced Photon Source (APS) upgrade. A horizontally diffracting double crystal monochromator which includes a sagittally focusing second crystal will collect most of the photons generated when the chirped electron beam traverses the undulator. A Kirkpatrick-Baez mirror system after the monochromator will deliver to the sample a beam which has an approximately linear correlation between time and vertical beam angle. The correlation at the sample position has a slope of 0.052 ps/{mu}rad extending over an angular range of 800 {mu}rad for a cavity deflection voltage of 2 MV. The expected time resolution of the whole system is 2.6 ps. The total flux expected at the sample position at 10 keV with a 0.9 eV energy resolution is 5.7 Multiplication-Sign 10{sup 12} photons/s at a spot having horizontal and vertical full width at half maximum of 33 {mu}m horizontal by 14 {mu}m vertical. This new beamline will enable novel time-dispersed diffraction experiments on small samples using the full repetition rate of the APS.

43 PARTICLE ACCELERATORS↗