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DOE OSTI · 1624694

Nanomembrane-based materials for Group IV semiconductor quantum electronics

Paskiewicz, D. M.·Savage, D. E.·Holt, M. V.·Evans, P. G.·Lagally, M. G.
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Abstract

Strained-silicon/relaxed-silicon-germanium alloy (strained-Si/SiGe) heterostructures are the foundation of Group IV-element quantum electronics and quantum computation, but current materials quality limits the reliability and thus the achievable performance of devices. In comparison to conventional approaches, single-crystal SiGe nanomembranes are a promising alternative as substrates for the epitaxial growth of these heterostructures. Because the nanomembrane is truly a single crystal, in contrast to the conventional SiGe substrate made by compositionally grading SiGe grown on bulk Si, significant improvements in quantum electronic-device reliability may be expected with nanomembrane substrates. We compare lateral strain inhomogeneities and the local mosaic structure (crystalline tilt) in strained-Si/SiGe heterostructures that we grow on SiGe nanomembranes and on compositionally graded SiGe substrates, with micro-Raman mapping and nanodiffraction, respectively. Significant structural improvements are found using SiGe nanomembranes.

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NANOSCALE MATERIALSSTRUCTURAL PROPERTIES36 MATERIALS SCIENCE42 ENGINEERING77 NANOSCIENCE AND NANOTECHNOLOGYELECTRONIC DEVICESScience & Technology - Other Topics

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Paskiewicz, D. M., Savage, D. E., Holt, M. V., Evans, P. G., Lagally, M. G.. 2014-02-27. Nanomembrane-based materials for Group IV semiconductor quantum electronics. https://doi.org/10.1038/srep04218

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