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Fairbrother, D. Howard

Publications and source records attributed to Fairbrother, D. Howard.

Modification of ZIF‐8 Membranes for Gas Separation Using X‐ray Radiation

Abstract We report an X‐ray radiation‐induced modification of the structure and gas permeation behavior of ZIF‐8 membranes. With 300 min irradiation time, CO 2 permeance decreases by only 9 %, while N 2 and CH 4 permeances reduce by 75 and 65 %, respectively, leading to 3.7‐ and 2.6‐fold enhancements in ideal selectivity for CO 2 /N 2 and CO 2 /CH 4 .

Lee, Dennis T.↗

Modification of ZIF‐8 Membranes for Gas Separation Using X‐ray Radiation

Here, we report an X-ray radiation-induced modification of the structure and gas permeation behavior of ZIF-8 membranes. With 300 min irradiation time, CO 2 permeance decreases by only 9 %, while N 2 and CH 4 permeances reduce by 75 and 65 %, respectively, leading to 3.7- and 2.6-fold enhancements in ideal selectivity for CO 2 /N 2 and CO 2 /CH 4 .

ZIF-8 membranes↗

Zinc‐Imidazolate Films as an All‐Dry Resist Technology

Here, motivated by the drawbacks of solution phase processing, an all‐dry resist formation process is presented that utilizes amorphous zinc‐imidazolate (aZnMIm) films deposited by atomic/molecular layer deposition (ALD/MLD), patterned with electron beam lithography (EBL), and developed by novel low temperature (120 °C) gas phase etching using 1,1,1,5,5,5‐hexafluoroacetylacetone (hfacH) to achieve well‐resolved 22 nm lines with a pitch of 30 nm. The effects of electron beam irradiation on the chemical structure and hfacH etch resistance of aZnMIm films are investigated, and it is found that electron irradiation degrades the 2‐methylimidazolate ligands and transforms aZnMIm into a more dense material that is resistant to etching by hfacH and has a C:N:Zn ratio effectively identical to that of unmodified aZnMIm. These findings showcase the potential for aZnMIm films to function in a dry resist technology. Sensitivity, contrast, and critical dimensions of the patterns are determined to be 37 mC cm −2 , 0.87, and 29 nm, respectively, for aZnMIm deposited on silicon substrates and patterned at 30 keV. This work introduces a new direction for solvent‐free resist processing, offering the prospect of scalable, high‐resolution patterning techniques for advanced semiconductor fabrication processes.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Enantioselective catalysts based on metal-organic framework-supported nucleotides

Adenosine triphosphate (ATP) and other nucleotides can be irreversibly bound to the metal-organic framework (MOF) MIL-101(Cr). Analysis of X-ray diffraction data suggests that the location of the adsorbed ATP molecule is in proximity of the Cr 3 clusters. Solid-state NMR and DFT calculations indicate that ATP is bound to MIL-101(Cr) through linkages of the terminal phosphate group with Cr(III) of the framework. In the presence of Cu(II) ions, the MOF-supported nucleotides can function as stable and reusable enantioselective heterogeneous catalysts for reactions like Diels-Alder and Michael addition. In conclusion, compared to the corresponding homogeneous nucleotide-based artificial metalloenzymes (ArMs), the MOF-supported nucleotide-based ArMs exhibit significantly enhanced activity and selectivity in certain cases, demonstrating their potential as a new class of enantioselective heterogeneous catalysts.

36 MATERIALS SCIENCE↗

Solvent-free bottom-up patterning of zeolitic imidazolate frameworks

Patterning metal-organic frameworks (MOFs) at submicrometer scale is a crucial yet challenging task for their integration in miniaturized devices. Here we report an electron beam (e-beam) assisted, bottom-up approach for patterning of two MOFs, zeolitic imidazolate frameworks (ZIF), ZIF-8 and ZIF-67. A mild pretreatment of metal oxide precursors with linker vapor leads to the sensitization of the oxide surface to e-beam irradiation, effectively inhibiting subsequent conversion of the oxide to ZIFs in irradiated areas, while ZIF growth in non-irradiated areas is not affected. Well-resolved patterns with features down to the scale of 100 nm can be achieved. This developer-free, all-vapor phase technique will facilitate the incorporation of MOFs in micro- and nanofabrication processes.

77 NANOSCIENCE AND NANOTECHNOLOGY↗