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Fernandez, R.

Publications and source records attributed to Fernandez, R..

Improved Hypersonic Inlet Performance Using Validated Strut Compression Designs

Aerojet is currently executing two Strutjet propulsion contracts: one a Rocket Based Combined Cycle (RBCC) engine for a NASA-Marshall Space Flight Center (MSFC) Advanced Reusable Transportation Technology (ARTT) program, the second a Dual Mode Ram/Scramjet engine for a USAF Wright Laboratories Storable Fuel Scramjet Flow Path Concepts program. The engines employed in both programs operate at supersonic and low hypersonic speeds and use inlets employing forebody external and sidewall compression. Aerojet has developed and validated a successful design methodology applicable to these inlet types. Design features include an integrated vehicle forebody, external side compression struts, strut sidewall and throat bleed, a throat shock trap, and variable geometry internal contraction. Computation Fluid Dynamic (CFD) predictions and test data show these inlets allow substantially increased flow turning angles over other designs. These increased flow turning angles allow shorter and lighter engines than current designs, which in turn enables higher performing vehicles with broad operating characteristics. This paper describes the designs of two different inlets evaluated by the NASA-MSFC and USAF programs, discusses the results of wind tunnel tests performed by NASA-Lewis Research Center, and provides correlations of test data with CFD predictions. Parameters of interest include low Mach number starting capability, start sensitivity as a function of back pressure at various contraction ratios, flow turning angles, strut and throat bleed effects, and pressure recovery at various Mach numbers.

Bulman, M. J.

Electron-Diffraction Analysis of Growth of GaAs

Report describes experiments that used reflection high-energy-electron diffraction (RHEED) to investigate behavior of GaAs surfaces during and after growth by molecular-beam epitaxy (MBE). Experimental results show dynamic RHEED measurements useful both as probes of surface and growth kinetics and as methods for determining and reproducing surface and growth conditions.

Lewis, B. F.

Arsenic-induced intensity oscillations in reflection high-energy electron diffraction measurements

A technique of arsenic-induced RHEED intensity oscillations has been used to accurately measure arsenic incorporation rates as a function of substrate temperature during the homoepitaxial growths of both GaAs and InAs by molecular beam epitaxy (MBE). Measurements were made at growth temperatures from 350 to 650 C and at arsenic fluxes of 0.1 to 10.0 monolayer/s. The method measures only the arsenic actually incorporated into the growing film and does not include the arsenic lost in splitting the arsenic tetramers or lost by evaporation from the sample.

Lewis, B. F.

Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structures

GaAs/InAs(100) multiple interface structures involving 7.4 percent lattice mismatch have been fabricated via molecular beam epitaxy and examined via transmission electron microscopy. It is found that high-quality, dislocation-free interfaces involving such high lattice mismatch can indeed be experimentally realized for very thin layers provided proper care is given to achieve a balance between the growth kinetics and the thermodynamics leading to the equilibrium ground state of the strained layer. The compressive strain is homogeneously accommodated and a tetragonal distortion is induced in the InAs layer with a perpendicular lattice constant in close agreement with that expected on the basis of the continuum theory and elastic constants of bulk InAs.

Grunthaner, F. J.

Temperature-dependent ion mixing and diffusion during sputtering of thin films of CrSi2 on silicon

Measurements of sputtering yields and composition profiles have been carried out using backscattering spectrometry for samples of CrSi2 on Si irradiated wth 200-keV Xe ions. When the CrSi2 layer is thinner than the ion range, the sputtering yield ratio of Si to Cr increases from 3.5 for room-temperature irradiation to 65 at 290 C. For a thick sample, the corresponding increase is from 2.4 to 4.0 only. These changes are explained in terms of a rise in the Si surface concentration ot 290 C. The driving force for this process seems to be the establishment of stoichiometric CrSi2 compound. Transport of Si to the surface is by ion mixing in the thin sample and thermal diffusion through the thick layer.

Shreter, U.