NASA NTRS · 19860027699
Reflection high energy electron diffraction intensity behavior during homoepitaxial molecular beam epitaxy growth of GaAs and implications for growth kinetics and mechanisms
Abstract
The source did not provide an abstract. Follow the original record for more information.
Keep this discovery
Explore connections, maps & timelines
Lewis, B. F., Grunthaner, F. J., Fernandez, R., Madhukar, A., Lee, T. C.. 1985-10-01. Reflection high energy electron diffraction intensity behavior during homoepitaxial molecular beam epitaxy growth of GaAs and implications for growth kinetics and mechanisms. https://ntrs.nasa.gov/citations/19860027699
Cite the original work for its findings. Save a collection to share your selection of sources.