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Lewis, B. F.

Publications and source records attributed to Lewis, B. F..

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Common spaceborne multicomputer operating system and development environment

A preliminary technical specification for a multicomputer operating system is developed. The operating system is targeted for spaceborne flight missions and provides a broad range of real-time functionality, dynamic remote code-patching capability, and system fault tolerance and long-term survivability features. Dataflow concepts are used for representing application algorithms. Functional features are included to ensure real-time predictability for a class of algorithms which require data-driven execution on an iterative steady state basis. The development environment supports the development of algorithm code, design of control parameters, performance analysis, simulation of real-time dataflow applications, and compiling and downloading of the resulting application.

Craymer, L. G.↗
NASA NTRS1986

Electron-Diffraction Analysis of Growth of GaAs

Report describes experiments that used reflection high-energy-electron diffraction (RHEED) to investigate behavior of GaAs surfaces during and after growth by molecular-beam epitaxy (MBE). Experimental results show dynamic RHEED measurements useful both as probes of surface and growth kinetics and as methods for determining and reproducing surface and growth conditions.

Lewis, B. F.↗
NASA NTRS1986

Arsenic-induced intensity oscillations in reflection high-energy electron diffraction measurements

A technique of arsenic-induced RHEED intensity oscillations has been used to accurately measure arsenic incorporation rates as a function of substrate temperature during the homoepitaxial growths of both GaAs and InAs by molecular beam epitaxy (MBE). Measurements were made at growth temperatures from 350 to 650 C and at arsenic fluxes of 0.1 to 10.0 monolayer/s. The method measures only the arsenic actually incorporated into the growing film and does not include the arsenic lost in splitting the arsenic tetramers or lost by evaporation from the sample.

Lewis, B. F.↗
NASA NTRS1985

Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structures

GaAs/InAs(100) multiple interface structures involving 7.4 percent lattice mismatch have been fabricated via molecular beam epitaxy and examined via transmission electron microscopy. It is found that high-quality, dislocation-free interfaces involving such high lattice mismatch can indeed be experimentally realized for very thin layers provided proper care is given to achieve a balance between the growth kinetics and the thermodynamics leading to the equilibrium ground state of the strained layer. The compressive strain is homogeneously accommodated and a tetragonal distortion is induced in the InAs layer with a perpendicular lattice constant in close agreement with that expected on the basis of the continuum theory and elastic constants of bulk InAs.

Grunthaner, F. J.↗
NASA NTRS1985

Preparing InSb Substrates

Molecular-beam epitaxial substrates passivated by chloride film growth. Chloride layer produced by direct chlorination, by chloride radicals in solutions, or by formation of preliminary oxide layer followed by chloride substitution.

Vasquez, R. P.↗
NASA NTRS1984

Improved Electrostatic Optical System

Device suitable for molecular epitaxial formation of semiconductor components. Improved electrostatic lens system uses cylindrical mirror as central element between two tubular lenses. Abberations introduced by mirror tend to cancel those introduced by tubular lenses. Result is order-of-magnitude improvement in chromatic or spherical compensation.

Lewis, B. F.↗
NASA NTRS1983

Cleaning chemistry of GaAs(100) and InSb(100) substrates for molecular beam epitaxy

Ploog (1980) and Bachrach and Krusor (1981) have pointed out the importance of substrate preparation and surface cleaning for obtaining high quality films with the aid of molecular beam epitaxial growth techniques. In the present investigation, high resolution X-ray photoemission (XPS) is used to determine the oxide removal mechanism for GaAs(100) substrates which have undergone a standardized cleaning procedure. Other objectives of the investigation are related to a comparison of different cleaning procedures in order to minimize carbon contamination, the extension of these cleaning techniques to other III-V compound semiconductors such as InSb, and the evaluation of the sensitivity of the compositional results to electron-induced damage effects.

Vasquez, R. P.↗
NASA NTRS1983

Cleaning chemistry of InSb(100) molecular beam epitaxy substrates

InSb has been used as a substrate for molecular beam epitaxy. For good epitaxial growth, a substrate surface which is smooth and clean on an atomic scale is required. Chemical cleaning procedures provide an oxide film to passivate the surface. This film is then desorbed by in situ heating. The material forming the film should, therefore, have a high vapor pressure at some temperature less than the substrate melting temperature. A chloride film appears to satisfy the latter requirement. The present investigation is, therefore, concerned with the formation of a chloride film rather than an oxide film. Carbon contamination has been found to cause problems in chemical cleaning procedures. The level of carbon contamination found in the case of chloride film formation, is therefore compared with the corresponding level observed in procedures using oxide films. It appears that a chloride film grown in connection with a short exposure time to a Cl2 plasma is preferable to other passivation films studied.

Vasquez, R. P.↗
NASA NTRS1983

X-ray photoelectron spectroscopic study of the oxide removal mechanism of GaAs /100/ molecular beam epitaxial substrates in in situ heating

A standard cleaning procedure for GaAs (100) molecular beam epitaxial (MBE) substrates is a chemical treatment with a solution of H2SO4/H2O2/H2O, followed by in situ heating prior to MBE growth. X-ray photoelectron spectroscopic (XPS) studies of the surface following the chemical treatment show that the oxidized As is primarily As(+ 5). Upon heating to low temperatures (less than (350 C) the As(+ 5) oxidizes the substrate to form Ga2O3 and elemental As, and the As(+ 5) is reduced to As(+ 3) in the process. At higher temperatures (500 C), the As(+ 3) and elemental As desorb, while the Ga(+ 3) begins desorbing at about 600 C.

Vasquez, R. P.↗
NASA NTRS1982

XPS Study of SiO2 and the Si/SiO2 Interface

X-ray photoelectron spectroscopy (XPS) is analytical technique for understanding electronic structure of atoms close to surface in solids, in preference to bulk structure of material. Study found evidence for core-level chemical shifts arising from changes in local structural environment in amorphous SiO2 and at Si/SiO2 interface. Observed XPS spectra may be understood as sequential convolution of several functions, each with well-defined physical interpretation.

Grunthaner, F. J.↗
NASA NTRS1982

XPS Study of Oxide/GaAs and SiO2/Si Interfaces

Concepts developed in study of SiO2/Si interface applied to analysis of native oxide/GaAs interface. High-resolution X-ray photoelectron spectroscopy (XPS) has been combined with precise chemical-profiling technique and resolution-enhancement methods to study stoichiometry of transitional layer. Results are presented in report now available.

Grunthaner, F. J.↗
NASA NTRS1981

Integrated material-surface analyzer

These 10 surface-analysis tests can be run without breaking vacuum: secondary-ion mass spectroscopy, ion-scattering spectroscopy, electron-stimulated desorption, residual-gas analysis, auger electron spectroscopy, x-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, characteristic-electron energy-loss spectroscopy, scanning electron microscope, scanning low-energy electron probe. Quadruple mass spectrometer, used in first 4 tests, serves as electron transfer lens in last 6 tests.

Grunthaner, F. J.↗
NASA NTRS1980

XPS studies of structure-induced radiation effects at the Si/SiO2 interface

The interfacial structures of radiation hard and soft oxides grown by dry and wet processes on silicon substrates have been examined by high-resolution X-ray photoelectron spectroscopy. It is found that the primary difference in the local atomic structure at the Si/SiO2 interface is the significantly higher concentration of strained 120 deg SiO2 bonds and SiO interfacial species in soft samples. Results of in situ radiation damage experiments using low energy electrons (0-20 eV) are reported which correlate with the presence of a strained layer of SiO2 (20 A) at the interface. The results are interpreted in terms of a structural model for hole and electron trap generation by ionizing radiation.

Grunthaner, F. J.↗
NASA NTRS1979

Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high-resolution XPS

The chemical structures of thin SiO2 films, thin native oxides of GaAs (20-30 A), and the respective oxide-semiconductor interfaces, have been investigated using high-resolution X-ray photoelectron spectroscopy. Depth profiles of these structures have been obtained using argon ion bombardment and wet chemical etching techniques. The chemical destruction induced by the ion profiling method is shown by direct comparison of these methods for identical samples. Fourier transform data-reduction methods based on linear prediction with maximum entropy constraints are used to analyze the discrete structure in oxides and substrates. This discrete structure is interpreted by means of a structure-induced charge-transfer model.

Grunthaner, F. J.↗
NASA NTRS1977

Photoelectron spectrometer with means for stabilizing sample surface potential

An improved X-ray photoelectron spectrometer is disclosed, which includes circuit means to determine the surface potential of a sample, e.g., an insulator. The circuit means comprise an electron gun, whose potential is modulated at a preselected frequency above and below a selected potential with respect to the spectrometer common potential, e.g., ground. The beam of electrons is directed to the sample surface. The sample's surface potential is offset by an offset power supply with respect to the spectrometer common potential until the ac current which flows through the sample reaches a peak amplitude. A lock-in amplifier is included to measure the ac current in phase with the modulating frequency.

Grunthaner, F. J.↗