A 90 GHz Amplifier Assembled Using a Bump-Bonded InP-based HEMT
We report on the performance of a novel W-band amplifier fabricated utilizing very compact bump bonds.
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Engineering topics
Fitzsimmons, M.
Publications and source records attributed to Fitzsimmons, M..
Bump Bonding at JPL's MicroDevices Laboratory
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bump bonding indium↗
A 90 GHz Amplifier Assembled Using Flip-Chip Technology
This letter reports the performance of a novel single-stage W-band amplifier fabricated utilizing flip-chip bump-bonding. We have bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) device onto a separately fabricated passive circuit having a GaAs substrate.
FET amplifiers Millimeter wave FETs bump-bonding m↗
Advances in Discrete GaAs JFETs and Simple Amplifiers for Deep Cryogenic Readouts
The progress of the Jet Propulsion Laboratory in developing gallium arsenide junction field-effect transistors (GaAs JFETs) for application in infrared readout electronics operating below 10 Kelvin is discussed.
cryogenic readout gallium arsenide junction field-↗
Recent Advances in GaAs JFETs for Deep Cryogenic Focal Plane Readouts
The progress of Jet Propulsion Laboratory in developing gallium arsenide junction field-effect transistors (GaAs JFETs) for application in infrared readout electronics operating below 10 Kelvin is discussed.
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